1)CdTe碲化镉
1.Degradation of Ethidium Bromide Using CdTe Quantum Dots as Photo-catalysts;碲化镉量子点光催化降解溴化乙锭的研究
2.Application of Spectral Analysis in Growing Technique and Evaluating of the Quality of CdTe Crystal;光谱分析在碲化镉晶体制备和晶体评价中的应用
3.An Overview of CdTe Thin Film Solar Cells and Relevant Sputtering Fabrication;碲化镉薄膜太阳能电池及其溅射制备
英文短句/例句
1.mercruy telluride-cadmium telluride detector碲化汞-碲化镉探测器
2.CdTe nuclear radiation detector碲化镉核辐射探测器
3.Study on CdTe and Related Compound Polycrystalline Thin Films as Well as CdTe Solar Cell碲化镉及相关化合物多晶薄膜与碲化镉太阳电池研究
4.cadmium-telluride high temperature infrared fire detector碲化镉高温红外火情探测器
5.Effect of Wet Chemically Etching on Fabricating Process of CdTe Solar Cells;湿化学腐蚀在碲化镉太阳电池制备中的作用
6.One-pot Synthesis and Characterization of CdS and CdTe Nanocrystals一锅煮法制备硫化镉和碲化镉纳米晶及其性能表征(英文)
7.Studies on Altering Character of Metal-doped CdTe Thin Films by Ion Implant Technique;金属离子束注入对碲化镉薄膜材料的改性研究
8.Determination of Hydrogen Peroxide by Fluorescence Quenching of the Functional Nano-CdTe Fluorescence Probe功能性碲化镉纳米荧光探针荧光猝灭法测定过氧化氢
9.Electron Irradiation of CdTe Solar Cell and Interrelated Thin Film;碲化镉太阳电池及相关薄膜的电子辐照特性研究
10.The Third-Order Optical Nonlinearities of the Water Soluble CdTe Quantum Dots Investigated by Z-Scan;水溶性碲化镉量子点的三阶光学非线性特性的Z扫描研究
11.STUDY ON GRAPHITE PASTE FOR BACK CONTACT OF CdTe THIN FILM SOLAR CELLS AND MODULES石墨浆做背接触层的碲化镉薄膜太阳电池及组件的研究
12.Hydrogen Passivate HgCdTe: First-principle Study红外碲镉汞材料氢钝化行为的第一性原理研究
13.A binary compound of tellurium.碲化物碲的二元化合物
14.Evolution of Solid-liquid Interface of CdZnTe Crystal Growth by Vertical Bridgman Method碲锌镉垂直布里奇曼法晶体生长过程固液界面的演化
15.Growth of CdZnTe Single Crystals and Fabrication of CdznTe Room Temperature Nuclear Radiation Detectors;碲锌镉单晶体生长及碲锌镉室温核辐射探测器制备
16.optically optimal tellurium-cadmium-mercury infrared detector光优型碲镉汞红外探测器
17.The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction;碲镉汞环孔P-N结理论分析与测试
18.An Experimental Study of the Polishing Process for CZT Crystal;碲锌镉晶体基片抛光工艺的实验研究
相关短句/例句
cadmium telluride碲化镉
1.he thin film cadmium telluride is deposited by close-spaced sublimation technique under low pressure of inner gas.３）Ｐａ低压氦气、氩气等气氛下淀积多晶碲化镉薄膜。
3)cadmium telluride(CdTe)碲化镉(CdTe)
4)CdTe/CdS碲化镉/硫化镉
5)Cadmium Zinc Telluride(CZT)碲化锌镉(CZT)
6)mercruy telluride-cadmium telluride detector碲化汞-碲化镉探测器
延伸阅读
碲化镉分子式：CAS号：性质：周期表第II，VI族元素化合物半导体。强离子性的共价键结合。立方晶系闪锌矿型结构，晶格常数0.6477nm，为复式晶格。密度5.86g/cm3。熔点1098℃。室温禁带宽度1.50eV。电子和空穴迁移率分别为6×10-2和6.5×10-3/(V·s)。采用区域熔炼法、高压熔融法制备单晶。用于制作近红外光探测器、γ和X射线谱仪、电光调制器等。
