1)Czochralski crystal growth提拉法晶体生长
1.What this paper study including: (1) In the Czochralski crystal growth process, thermal radiation is one of the main method of heat transfer, the radiation transfer between surfaces takes the principle actor as the gas in the furnace has less affect in radiation process.本文针对提拉法晶体生长全局特点,研究内容包括以下几个方面:(1)在提拉法晶体生长过程中,辐射换热将在热量传递过程中起主要作用,气体介质参与辐射传热作用很小,主要表现为表面之间的辐射换热。
英文短句/例句
1.Numerical Simulation of Czochralski Crystal Growth and Its Model Experiment;提拉法晶体生长过程的数值分析及模拟实验
2.Studies of CdSe Single Crystal Growth and Characterization by Vapor Phase Pull Method;气相提拉法生长CdSe单晶体及其性能表征
3.The Study of Czochralski Method Growth and Properties of Nd～(3+): YAG Crystal;提拉法掺Nd～（3+）：YAG晶体的生长及性能研究
4.Numerical Simulation Analysis of Czochralski Growth Processes for Langasite Crystal提拉法生长硅酸镓镧晶体过程的数值模拟分析
5.The Growth of Double Refraction Crystal YVO_4 by Czochralski Methodand and Study the Growth Defects提拉法生长双折射晶体钒酸钇（YVO_4）及其缺陷研究
6.Effect of Annealing Treatments on Scintillation Properties of Lu_2Si_2O_7∶Ce Grown by Czochralski Method退火对提拉法生长Lu_2Si_2O_7∶Ce晶体闪烁性能的影响
7.Fuzzy PID Control System for the Pulling Technique of Laser Crystal激光晶体提拉生长模糊PID控制系统
8.Growth of large Ti~(3+):BeAl_2O_4 laser crystals by Czochralski method大尺寸掺钛铝酸铍(Ti~(3+):BeAl_2O_4)激光晶体的提拉法生长
9.czochralski grown ingot切克劳斯基法生长晶体
10.Growth of α-Al_2O_3:C Crystal by Edge-Defined,Film-Fed Growth Technique导模法生长α-Al_2O_3:C晶体
11.The control system of silicon czochralski crystal-growth based on WinCC and S7-300 PLC基于WinCC和S7-300PLC的单晶硅提拉生长控制系统
12.Application Research for the Czochralski Crystal-Growth System of Si on WinCC Configuration Software基于WinCC的单晶硅提拉生长系统应用研究
13.HYDROTHERMAL RE-CRYSTALLIZATION PURIFICATION OF TlBr POWDER AND ITS CRYSTAL GROWTHTlBr粉末的水热重结晶提纯和TlBr晶体生长(英文)
14.Synthesis of Cubic Boron Nitride Microcrystals and Exploration of Growing Its Bulk Crystals;立方氮化硼微晶合成及体块晶体生长方法探索
15.Thermal Stress Distribution of GaAs and InP Crystals in LEC Growth and of GaAs Crystal in LEFZ Growth;LEC法生长GaAs、InP晶体及LEFZ法生长GaAs晶体中热应力分布
16.Based on the crystal growth elementary principle,a plagioclase crystalline velocity equation is suggested.从晶体生长的基本原理出发，提出了按非连续机制生长的斜长石晶体结晶速率表达式。
17.Growth and Investigation of Raman-active Double Tungstate Crystals;双钨酸盐拉曼激光晶体的生长及物性研究
18.Global Simulation Crystal Growth of CdZnTe by the Detached Vertical Bridgman Method分离结晶垂直Bridgman法生长CdZnTe晶体的全局数值模拟
相关短句/例句
crystal pulling method晶体提拉法
3)Czochralski method提拉法生长
1.Cadmium gadolinium tungstate [CdGd_2(WO_4)_4,CGW] single crystal was grown by the Czochralski method.采用提拉法生长了钨酸钆镉[CdGd_2(WO_)_4,CGW]单晶。
4)hydrothermal crystal growth水热法晶体生长
5)crystal growth from flux熔盐法晶体生长
6)Crystal pulling引上法晶体生长
延伸阅读
布里奇曼晶体生长法分子式：CAS号：性质：又称布里奇曼晶体生长法。一种常用的晶体生长方法。用于晶体生长用的材料装在圆柱型的坩埚中,缓慢地下降,并通过一个具有一定温度梯度的加热炉,炉温控制在略高于材料的熔点附近。根据材料的性质加热器件可以选用电阻炉或高频炉。在通过加热区域时,坩埚中的材料被熔融,当坩埚持续下降时,坩埚底部的温度先下降到熔点以下,并开始结晶,晶体随坩埚下降而持续长大。这种方法常用于制备碱金属和碱土金属卤化物和氟化物单晶。
