CdSe晶体,CdSe crystal
1)CdSe crystalCdSe晶体
1.The infrared frequency doubles parameters and element processes of CdSe crystals were studied.根据非线性光学原理和折射率色散关系,从理论上计算出CdSe晶体的有效非线性系数和倍频元件相位匹配角与基频光波长(5。
英文短句/例句

1.Infrared Frequency Doubles Parameters and Element Process of CdSe CrystalCdSe晶体倍频光学参数及元件加工研究
2.Studies on Growth Technics of CdSe Single Crystals and Performance of Room Temperature Nuclear Radiation Detectors;CdSe单晶体生长工艺与探测器性能研究
3.Review Synthetic Methods of CdSe Semiconductor Nanocrystals;硒化镉(CdSe)半导体纳米晶制备方法评述
4.Studies on Point Defects of CdSe Single Crystal;硒化镉(CdSe)单晶体的点缺陷研究
5.Growth and Properties of CdSe Single Crystals;硒化镉(CdSe)单晶体的生长及其性能研究
6.Shape Control of CdSe Nanocrystals in Mono-solvent System单溶剂体系中CdSe纳米晶体的形貌调控研究
7.Growth of CdSe Single Crystals and Room Temperature Nuclear Radiation Detectors;硒化镉(CdSe)单晶体生长及其室温核辐射探测器
8.Studies of CdSe Single Crystal Growth and Characterization by Vapor Phase Pull Method;气相提拉法生长CdSe单晶体及其性能表征
9.Preparations of CdSe Single Crystals and Nuclear Radiation Detectors;硒化镉(CdSe)单晶体及其核辐射探测器的制备
10.Growth and Properties Characterization of IR Nonlinear Optics Crystal CdSe红外非线性光学晶体CdSe生长与性能表征
11.STRUCTURE AND SPECTRAL CHARACTERISTICS OF CdS/CdSe CORE/SHEL STRUCTURE SEMICONDUCTOR NANOCRYSTALCdS/CdSe核壳结构半导体纳米晶结构及光谱特性
12.The Purification of CdSe Raw Material and the Computer Programming Realization to Protract Single Crystals' Standard Pole Figures;硒化镉(CdSe)单晶体生长原料的提纯及其标准极图的计算机实现
13.Optical properties in CdSe and CdSe/ZnS quantum dots;CdSe和CdSe/ZnS半导体量子点光谱特性的研究
14.CdSe Detector Wafer Surface Treatment and Passivation Study;CdSe探测器晶片表面处理和钝化研究
15.Synthesis and Characterization of CdSe Nanocrystals under Mild Conditions;在温和条件下CdSe纳米晶的制备与表征
16.The preparation and characterization of nanocrystallineTiO_2/CdSe film electrodeTiO_2/CdSe纳晶复合薄膜电极的制备及表征
17.Temperature dependence of band gap of CdSe colloidal nanocrystalsCdSe纳米晶带隙随温度变化的研究
18.Hybrid Solar Cells Based on CdSe Nanocrystallines and MEH-PPV Conjugated PolymerCdSe纳米晶/MEH-PPV复合型光电池研究
相关短句/例句

CdSe single crystalsCdSe单晶体
1.The experimental results indicated that the CdSe single crystals grown in our laboratory are always n-type compound semiconductor with a hexagonal system and the band gap about 1.通过变温(20~300K)霍尔效应测量,研究了CdSe单晶体的电阻率ρ(T)、载流子浓度n(T)、霍尔系数RH(T)和霍尔迁移率μH(T)的温度依赖关系。
2.Growth of CdSe Single Crystals and Room Temperature Nuclear Radiation Detectors;CdSe单晶体是最有前途的室温核辐射探测器材料之一,但由于没有制备出高质量的CdSe单晶体,加上没有成熟的半导体材料加工技术与器件制作工艺,人们对CdSe探测器没有进行深入的研究。
3)CdSe single crystalCdSe单晶体
1.High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.本文报道了用改进的垂直气相法 (多级提纯垂直气相法 )生长富Cd的CdSe单晶体 ,并对晶体的性能进行了观测 ,其电阻率为 10 7Ωcm量级 ,电子陷阱浓度为 10 8cm- 3量级 ,第一次报道了 (110 )面的腐蚀形貌。
4)CdSe nanocrystalsCdSe纳米晶
1.Electroluminescence of CdSe Nanocrystals Synthesized by Aqueous Solution;水溶性CdSe纳米晶的电致发光研究
2.With trioctylphosphine and oleic acid as the ligands of Se and Cd,high-quality CdSe nanocrystals with controlled particle size were synthesized in a 260~300 ℃ noncoordinating solvent octadecene under argon flow.在氩气保护下,用三辛基亚磷酸和油酸分别作为Se和Cd的配位体,在260~300℃的十八烯溶液中合成了尺寸可控的CdSe纳米晶。
3.The results of XPS confirmed the formation of CdSe nanocrystals,and the images of TEM demonstrated that the average size of CdSe nanocrystals was less than 10 nm and the aggregation occurred among the nanocrystals.以巯基乙酸为稳定剂,在水相中制备了CdSe纳米晶水溶胶,并用X射线光电子能谱和透射电子显微镜对其进行了表征,证明了CdSe纳米晶的形成。
5)CdSe crystalsCdSe单晶
6)nanocrystalline CdSe纳晶CdSe
延伸阅读

晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路(DTL)中的二极管,改为使用多发射极晶体管而构成。TTL电路于1962年研制成功,基本门电路的结构和元件参数,经历了3次大的改进。同DTL电路相比,TTL电路速度显著提高,功耗大为降低。仅第一代TTL电路产品,就使开关速度比DTL电路提高5~10倍。采用肖特基二极管的第三代TTL电路,开关时间可缩短到3~5纳秒。绝大部分双极型集成电路,都是TTL电路产品。