1)Slice of SiC monocrystalSiC单晶片
2)SiC plateletSiC片晶
1.The ultrafine SiC platelets,as an ideal toughening material,has been substituted for SiC fiber which is expensive and hardly prepared,because of its high strength,high modulus of elasticity and thermal conductivity.超细SiC片晶由于其高强度、高弹性模量和导热系数已成为替代价值昂贵、制备技术复杂SiC晶须的理想的增韧材料。
3)6H-SiC single crystal6H-SiC单晶
英文短句/例句
1.Infrared Spectra Study of the Electrical Properties of 6H-SiC;6H-SiC单晶电参数的红外光谱研究
2.Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties单晶6H-SiC纳米线的可控掺杂及光学特性
3.Pinning Effect of the Neutron-irradiated 6H-SiC Crystals中子辐照6H-SiC晶体中的钉扎效应
4.EFFECT OF NEUTRON-IRRADIATION ON SPECIFIC HEAT CAPACITY OF 6H-SiC CRYSTAL中子辐照对6H-SiC晶体比热容的影响
5.A Vertically Integrated Bipolar Storage Cell in 6H Silicor Carbide for Nonvolatile Memory Applications非易失性存储器应用的一种6H－SiC垂直集成的双极存储单元
6.Growth of 3C-SiC Buffer and SiCGe Film on 6H-SiC;6H-SiC上3C-SiC缓冲层及SiCGe薄膜的生长
7.Effects of a Buffer Layer on the Hetero-epi-growth of SiCGe on 6H-SiC;3C-SiC缓冲层对在6H-SiC上生长SiCGe的影响
8.Investigation the Mechanism of Ni Based Ohmic Contacts to SiC;Nickel/6H-SiC欧姆接触机理研究
9.Studies of the Property of Interface on SiO_2/6H-SiC and the Defects in SiO_2;SiO_2/6H-SiC界面特性及其氧化层缺陷研究
10.Study of the Growth Characteristics of P-SiCGe Layers Grown on 6H-SiC Substrates;6H-SiC衬底上生长p-SiCGe薄膜的研究
11.A Study of 6H-SiC Heterojunction Source/Drain MOSFET;6H-SiC异质结源漏MOSFET的研究
12.Study of the SiO_2 Film by Thermal Oxidation on 6H-SiC;6H-SiC表面热氧化生长的SiO_2特性研究
13.Studies on Metal-Semiconductor Contacts of 6H-SiC and Some Interrelated Processes;n型6H-SiC金半接触及相关工艺研究
14.Studies of Characteristics of 6H-Sic Schottky Diodes;6H-SiC肖特基二极管的特性研究
15.Low-Temperature-Dependent Raman Study on A_1(LO) Mode of 6H-SiC6H-SiC的A_1(LO)拉曼峰低温温度特性研究
16.Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts氢氟酸刻蚀对Ni/6H-SiC接触性质的作用
17.Research Progress in Irradiation Effects of 6H-SiC Materials and Devices6H-SiC材料与器件辐照效应的研究进展
18.Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET6H-SiC埋沟MOSFET的C-V解析模型研究
相关短句/例句
SiC plateletSiC片晶
1.The ultrafine SiC platelets,as an ideal toughening material,has been substituted for SiC fiber which is expensive and hardly prepared,because of its high strength,high modulus of elasticity and thermal conductivity.超细SiC片晶由于其高强度、高弹性模量和导热系数已成为替代价值昂贵、制备技术复杂SiC晶须的理想的增韧材料。
3)6H-SiC single crystal6H-SiC单晶
4)SiC single crystalSiC单晶
1.Observation of tiny polytypes in SiC single crystal by synchrotron radiation white beam X-ray topography;同步辐射白光形貌术观察SiC单晶中的微小多型结构
2.Temperature field of SiC single crystal growth furnace is studied using finite element analysis,and numerical simulation software is used to simulate temperature distribution of SiC single crystal growth furnace.采用有限元分析方法对物理气相传输法SiC单晶生长炉内温度场进行研究,采用有限元模拟软件对生长炉内温度分布进行模拟,得到了炉内温度的分布结果。
3.Micro-Raman spectroscopy has been applied to identify polytypes in SiC single crystal grown by the seeded sublimation technique.利用激光拉曼光谱仪测量了SiC单晶中不同多型的显微Raman光谱。
5)Single crystal α-SiC单晶α-SiC
6)SiC single crystal growthSiC体单晶生长
延伸阅读
Sic1、名称解释碳化硅又称金钢砂或耐火砂。碳化硅是用石英砂、石油焦(或煤焦)、木屑(生产绿色碳化硅时需要加食盐)等原料在电阻炉内经高温冶炼而成。目前我国工业生产的碳化硅分为黑色碳化硅和绿色碳化硅两种，均为六方晶体，比重为3.20～3.25，显微硬度为2840～3320kg/mm2。包括黑碳化硅和绿碳化硅，其中：黑碳化硅是以石英砂,石油焦和优质硅石为主要原料,通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉,性脆而锋利。绿碳化硅是以石油焦和优质硅石为主要原料,添加食盐作为添加剂，通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉。2.性质碳化硅的硬度很大，具有优良的导热和导电性能，高温时能抗氧化。3.用途(1)作为磨料，可用来做磨具，如砂轮、油石、磨头、砂瓦类等。(2)作为冶金脱氧剂和耐高温材料。碳化硅主要有四大应用领域,即: 功能陶瓷、高级耐火材料、磨料及冶金原料。目前碳化硅粗料已能大量供应, 不能算高新技术产品,而技术含量极高 的纳米级碳化硅粉体的应用短时间不可能形成规模经济。(3)高纯度的单晶，可用于制造半导体、制造碳化硅纤维。4.产地、输往国别及品质规格(1)产地：青海、宁夏、河南、四川、贵州等地。(2)输往国别：美国、日本、韩国、及某些欧洲国家。(3)品质规格：①磨料级碳化硅技术条件按gb/t2480—96。各牌号的化学成分由表6-6-47和表6-6-48给出。②磨料粒度及其组成按gb/t2477—83。磨料粒度组成测定方法按gb/t2481—83。
