4H-SiC,H-SiC英语短句,例句大全

4H-SiC,H-SiC
1)H-SiC4H-SiC
1.Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC;4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制
2.Fabrication of 4H-SiC Buried-Channel nMOSFETs;4H-SiC埋沟MOSFET的研制(英文)
3.Second-Order Raman Scattering from n- and p-Type 4H-SiC;n型和p型4H-SiC的二级喇曼谱(英文)

英文短句/例句

1.A Study on Nonlinear Models for 4H-SiC MESFET;4H-SiC MESFET非线性模型研究
2.Study of Annealing of 4H-SiC SBD and JBS4H-SiC SBD和JBS退火研究
3.The Theoretical and Experimental Study for 4H-SiC MESFET;4H-SiC MESFET理论模型与实验研究
4.Study on Defects of SiO_2/4H-SiC(0001) Interface by XPS;SiO_2/4H-SiC（0001）界面缺陷的XPS研究
5.The Study on 4H-SiC MOS Process and Electrical Properties;4H-SiC MOS结构工艺与电学特性研究
6.Study on Characteristics of 4H-SiC npn Bipolar Transistor;4H-SiC npn双极晶体管特性研究
7.The Study of High Frequency Small Signal Characteristics for 4H-SiC Buried-Channel MOSFET;4H-SiC埋沟MOSFET的高频小信号特性研究
8.Simulation Study of Breakdown Characteristics of 4H-SiC Buried-Channel MOSFET;4H-SiC埋沟MOSFET击穿特性模拟研究
9.A Simulation Study of 4H-SiC Buried-Channel MOSFET;4H-SiC埋沟MOSFET的特性模拟研究
10.The Parameter Model and the Design of RF Amplifier for 4H-SiC MESFETs;4H-SiC MESFET参数模型和射频放大器的设计
11.Study of 4H-SiC Merged PiN/Schottky(MPS) Diodes;4H-SiC混合PiN/Schottky（MPS）二极管的研究
12.Investigation of TiC Ohmic Contacts to N-type 4H-SiC Semiconductor;TiC/n型4H-SiC半导体欧姆接触研究
13.Research on Optimizing the Structure of the Buried Gate-buried Channel 4H-SiC MESFET埋栅—埋沟4H-SiC MESFET结构优化研究
14.Study on 4H-SiC SAM-APD Structure UV Detector4H-SiC SAM-APD结构紫外探测器的研究
15.Study on Radiation Hardness of 4H-SiC PiN Diodes4H-SiC PiN二极管抗辐照特性研究
16.Characterization of 4H-SiC Homoepitaxial layers4H-SiC同质外延层的质量表征
17.Study on ECR Hydrogen Plasma Treatment of N-type 4H-SiCN型4H-SiC ECR氢等离子体处理研究
18.The Buffer Layer of Al-doped 4H-SiCAl掺杂4H-SiC同质外延的缓冲层

相关短句/例句

4H-SiC substrate4H-SiC基底
1.Al2O3/SiO2 double-layer UV antireflection coatings were designed and fabricated on 4H-SiC substrate,and the validity of theoretical design was further verified by scanning electron microscope (SEM) and reflection spectrum.在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。
3)4H-SiC film4H-SiC薄膜
1.The 4H-SiC films heteroepitaxially deposited on AlN/Si (111) substrates by chemical vapor deposition (CVD) are investigated in this work.利用化学气相淀积(CVD)的方法在AlN/Si(111)复合衬底上成功实现了4H-SiC薄膜的异质外延生长,用X射线衍射(XRD)、扫描电子显微镜(SEM)、阴极荧光(CL)等方法对所得样品的结构特征、表面形貌和光学性质进行了表征测量。
4)Semi-insulating 4H-SiC半绝缘4H-SiC
5)4H-SiC homoepitaxial layers4H-SiC同质外延
6)high-quality semi-insulating 4H-SiC高纯半绝缘4H-SiC
1.ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDLPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性