1)PECVDPECVD法
1.Amorphous silicon films prepared by PECVD on the glass substrate have been crystallized by conventional furnace annealing(FA) at middle temperature.用PECVD法直接沉积的非晶硅(a-S i:H)薄膜用传统炉在中温退火,然后用拉曼光谱、XRD和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象。
2.Undoped amorphous silicon film deposited by PECVD at 30℃,350℃,450℃ substrate temperatures,annealed at 850℃ by conventional furnace for 3h and pulsed rapid thermal method for 5min was studied by using Raman,XRD and SEM.为研究传统炉子退火与光退火固相晶化的不同特点,用石英玻璃作衬底,在室温、350℃和450℃下用PECVD法直接沉积非晶硅(a-S i:H)薄膜,把沉积的样品分别在850℃下用传统炉子退火3h、用光快速热处理(RTP)5m in,然后用Ram an、XRD和SEM分析对比,发现传统炉子退火后的晶粒分布不均匀,光退火后的晶粒分布均匀。
3.Undoped amorphous silicon film deposited by PECVD at the temperature 200,250,300,350,400,450?℃ and stored for three months,then annealed at 450℃ has been studied by using micro-Raman scattering.通过PECVD法,用玻璃作衬底在200,250,300,350,400,450℃下直接沉积非晶硅(a-Si:H)薄膜,并在避光状态下贮存3个月,把前后样品用拉曼光谱分析,发现非晶硅峰值480 cm-1基本消失;在石英玻璃100℃下沉积非晶硅薄膜在700℃下10 min,700℃下20 min,750℃下2 min,850℃下1 min;850℃下1 min,850℃下2 min,850℃下5 min,850℃下10 min分别用卤钨灯光照退火,发现850℃下5 min已经充分结晶。
英文短句/例句
1.Study of Diamond-Like Carbon Films by ICP-PECVDICP-PECVD法制备类金刚石膜
2.Research of Poly-Si Films Deposited by ECR-PECVD at Low-temperature;ECR-PECVD法低温沉积Poly-Si薄膜的研究
3.Investigation of Diamond-Like Carbon Films Deposited by RF-PECVD;RF-PECVD法制备类金刚石薄膜的研究
4.Investigation of Carbon Nitride Thin Film by DBD-PECVDDBD-PECVD法制备CN薄膜的研究
5.Microstructures and Properties of CN Films Grown by Dielectric Barrier Discharge Plasma Enhanced Chemical Vapor DepositionDBD-PECVD法制备CN薄膜的结构及性能研究
6.Fabrication of P-type Amorphous Silicon Thin Films and Poly-Silicom by PECVD;PECVD法制备P型非晶硅薄膜及多晶硅薄膜
7.Preparation of SnO_2 Film by PECVD and Application on CdS/CdTe Solar Cells;SnO_2薄膜的PECVD法制备及其在CdTe电池中的应用研究
8.Fabrication of the Microcrystalline Silicon Materials and Solar Cells by PECVD;PECVD法制备微晶硅薄膜材料及太阳能电池
9.Overview on SiN Thin Film Prepared by PECVD for Silicon Solar CellPECVD法制备硅太阳电池SiN薄膜工艺研究进展
10.Microstructures and Tribological Properties of Diamond-Like Carbon Films Grown by Plasma Enhanced Chemical Vapor DepositionPECVD法沉积类金刚石膜的结构及其摩擦学性能
11.Preparation of Silicon-based Silicon Nitride Films by PECVD and Research on the Wearing PropertiesPECVD法硅基氮化硅薄膜的制备及其耐磨性研究
12.Study on the Hydrophobic Fluorinated Amorphous Carbon(a-C:F) Film Deposited by DBD-PECVDDBD-PECVD法制备高疏水性氟碳聚合物(a-C:F)薄膜的研究
13.Study on Intrinsic/B-doped na-Si:H Thin Film Deposited by Plasma Enhanced Chemical Vapor Deposition;PECVD法制备本征/掺硼纳米非晶硅薄膜及其性能研究
14.The Properties of Diamond-like Carbon Films on Stainless Steel by rf PECVD;rf PECVD法在不锈钢表面沉积类金刚石碳膜的性能研究
15.SnO_2 Films Prepared by PECVD and Their Applications on CdS/CdTe Thin Film Solar Cells;PECVD法制备SnO_2薄膜及其在CdTe薄膜太阳电池中的应用
16.Fabrication of Hydrogenarated Amorphous Silicon Thin Films by PECVD and the Study of Metal Induced Crystallization;PECVD法制备氢化非晶硅薄膜及其金属诱导晶化研究
17.Synthesis of Carbon Nanotubes Using Dielectric Barrier Discharge Plasma Enhanced Chemical Vapor Deposition (DBD-PECVD);利用DBD-PECVD方法制备碳纳米管的研究
18.Synthesis and Characterization of Diamond-like Carbon Films by rf. PECVD;利用射频PECVD方法生长类金刚石薄膜的实验研究
相关短句/例句
MOPECVD techniqueMO-PECVD方法
3)RF_PECVDRF-PECVD方法
4)MO-PECVD techniqueMO-PECVD
5)plasma enhanced chemical vapor depositon (PECVD)等离子体化学汽相沉积法(PECVD)
6)PECVD techniquePECVD技术
1.Sillicon nanocrystals embedded in a－ SiO_x:H (0 PECVD technique and high－ temperature annealing treatment.采用 PECVD技术制备的 a－ SiO_x:H (0 SiO_x:H基质的量子点复合膜（ nc－ Si/a－ SiO_x:H）。
延伸阅读
法性属法为法性土【法性属法为法性土】 谓真如法性之理，譬如虚空，遍一切处，乃是法身所证之体，即为所依之土，故名法性属法，为法性土。
