1)Relaxed-SiGe substrates硅锗弛豫衬底
2)SiGe Relaxed Virtual Substrates弛豫锗硅虚拟衬底
3)strain relaxed SiGe bufferSiGe弛豫衬底
1.The SiGe/Si quantum wells were designed and fabricated on the strain relaxed SiGe buffers and the optical properties were anlysised.本文利用超高真空化学气相沉积系统(UHV/CVD),采用插入低温Ge层(LTGe)的方法制备Si基SiGe弛豫衬底(弛豫缓冲层),并在衬底上外延SiGe/Si多量子阱,研究其光学性质。
英文短句/例句
1.Growth and Characterization of Si-based Strain Relaxed SiGe Substrate and SiGe/Si Quantum WellsSi基SiGe弛豫衬底及SiGe/Si量子阱生长与表征
2.Preparation of SiGe Buffer Layer by Oxidation of SiGe/Si MQW Structure氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底
3.Epitaxy of Strain-relaxed SiGe, Ge Films and Fabrication of Ge Photodetectors on Si SubstratesSi基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
4.Design and Fabrication of Microwave Power SiGe HBT and Novel SiGe HPT Based on Virtual Substrate微波功率SiGe HBT与基于虚衬底的SiGe HPT的研制
5.Mechanical and Impedance Relaxations Study in Na_xCo_2O_4Na_xCo_2O_4陶瓷的力学弛豫和阻抗弛豫研究
6.Snoek Relaxational Peak in a Fe-Cr-Al Alloy;Fe-Cr-Al合金中的Snoek弛豫
7.The nuclei can relax to their normal distribution.核子可以弛豫到它们正常分布状态。
8.A new relaxation oscillation mode is found through the dynamic simulation.通过模拟发现了新的弛豫振荡模式。
9.The relaxation is due to the interactions with the thermal excitations.弛豫是由热激发相互作用而产生。
10.Furthermore, they are all dealing with fully relaxed material.另外，它们都处理完全弛豫的材料。
11.Study on the Growth and Phase Transition of Relaxor Ferroelectric Single Crystals;弛豫铁电单晶的生长及其相结构研究
12.Preparation and Characterization of PST-based Relaxor Ferroelectric Ceramics;PST基弛豫铁电陶瓷的制备与性能研究
13.Synthesis and Relaxivity of Multi-Nuclear Gadolinium Complexes as New MRI Contrast Agents;多倍体钆（Ⅲ）配合物的合成与弛豫效能
14.Magnetic relaxation effects in phase-separated polycrystalline Nd_(0.85)Sr_(0.15)CoO_3;相分离体系Nd_(0.8)5Sr_(0.15)CoO_3的弛豫现象
15.Dielectric Relaxation and Multiferroic Characteristics of BiFeO_3, YFeO_3 and YMnO_3-Based CeramicsBiFeO_3、YFeO_3与YMnO_3基陶瓷的介电弛豫与多铁性
16.Research on Thulium-doped Fiber Lasers Cross-Relaxation Features掺铥光纤激光器的交叉弛豫特性研究
17.Research on Structure Relaxation, Crystallization and Magnetic Property of Fe-based AmorphousFe基非晶结构弛豫、晶化及磁性能研究
18.Density Functional Theory Study on TiO_2(110) Surface RelaxationTiO_2(110)表面弛豫的密度泛函理论研究
相关短句/例句
SiGe Relaxed Virtual Substrates弛豫锗硅虚拟衬底
3)strain relaxed SiGe bufferSiGe弛豫衬底
1.The SiGe/Si quantum wells were designed and fabricated on the strain relaxed SiGe buffers and the optical properties were anlysised.本文利用超高真空化学气相沉积系统(UHV/CVD),采用插入低温Ge层(LTGe)的方法制备Si基SiGe弛豫衬底(弛豫缓冲层),并在衬底上外延SiGe/Si多量子阱,研究其光学性质。
4)SiGe buffer layer锗硅弛豫缓冲层
5)virtual SiGe substrates锗硅虚衬底
6)virtual substrate硅锗虚衬底
延伸阅读
“质子-电子偶极-偶极”质子弛豫增强“质子-电子偶极-偶极”质子弛豫增强 物理学术语。原子核外层中不成对的电子质量小，但磁动性很强，可使局部磁场波动增强，促使氢质子弛豫加快，从而使T1和T2缩短，这种效应即为PEDDPRE。过渡元素和镧系元素大部分在d和f轨道有多个不成对电子，所以其离子往往具有PEDDPRE，可用来作顺磁性对比剂，如钆(Gd)。Gd在外层有7个不成对电子，具有很强的顺磁性。
