全耗尽,fully depleted英语短句,例句大全

全耗尽,fully depleted
1)fully depleted全耗尽
1.Research of SOI CMOS Integrated Circuit Based on Fully Depleted Technology;基于全耗尽技术的SOI CMOS集成电路研究
2.The Research of Deep Submicron Fully Depleted SOI MOSFET Parameter Extraction Method;深亚微米全耗尽SOI MOSFET参数提取方法的研究
3.With the reduction of critical dimension,the device that have higher driving ability and good short channel effect is one of the focuses and multiple-gate fully depleted SOI MOSFET can resolve this problem effectively due to better control ability in the channel.随着器件尺寸的不断缩小,对更大驱动电流和更有效抑制短沟道效应器件的研制成为研究的热点,SOI多栅全耗尽器件由于对沟道更好控制能力能够有效地解决尺寸缩小带来的短沟道效应问题[1]。

英文短句/例句

1.The High Temperature Application Research of Deep Sub Micron SOI CMOS Circuits;深亚微米全耗尽SOI CMOS的高温应用分析
2.2-D Current Model of Fully Depleted SOI BJMOSFET深亚微米全耗尽SOI BJMOSFET的二维电流模型
3.It is rapidly approaching the day of reckoning when it will totally exhaust its nuclear energy supply.一旦它完全耗尽其核能源，便行将寿终正寝。
4.The Research of Deep Submicron Fully Depleted SOI MOSFET Parameter Extraction Method;深亚微米全耗尽SOI MOSFET参数提取方法的研究
5.Simulation and Optimization of FD SOI CMOS Devices at High Temperatures;薄膜全耗尽SOI CMOS电路高温特性模拟和结构优化
6.Responsivity of fully depleted back illuminated silicon photodiode硅全耗尽背照式光电二极管的光谱响应
7.To deplete gradually, especially to the point of complete exhaustion.耗尽逐渐耗尽，尤指消耗直至完全枯竭
8.He had exhausted his supply of water.他已耗尽了全部供水。
9.I have used up all my energy.我耗尽了全部的精力。
10.The failure of the trap drained him of energy.这个完全失败的圈套耗尽了他的精力。
11.The enemy expended all their bullets on trying to win the battle.敌人为了打胜仗，耗尽了全部弹药。
12.It went on for nearly thirty years, and wasted all the power of Greece.它持续了将近三十年，耗尽了希腊的全部力量。
13.Worn out or exhausted, especially as a result of long-term stress.耗尽耗尽或用尽，尤指长时间施加压力的结果
14.deep depletion ccd深耗尽层电荷耦合掐
15.They exhausted the funds in a week.他们一周内耗尽了资金。
16.He soon consumed his fortune.他很快耗尽他的财产。
17.He has used up all his strength.他已经耗尽了他的体力。
18.Don't spend all your energies.不要耗尽所有的精力。

相关短句/例句

fully-depleted全耗尽
1.The total dose irradiation effects under different bias configurations for fully-depleted (FD) silicon on insulator (SOI) devices are investigated,especially the influence on device performance from radiation-induced trapped-charges.研究了不同偏置条件下,全耗尽SOI NMOSFET的总剂量抗辐射特性,主要讨论不同偏置条件对器件中陷获电荷的产生和分布,以及由此对器件性能产生的影响。
2.Dual poly gate fully-depleted SOI CMOS devices and circuits were investigated.对多晶硅双栅全耗尽SO I CM O S工艺进行了研究,开发出了1。
3.Using SIMOX substrate, fully-depleted thin-film SOI.选用SIMOX(Separation by Implantation of Oxygen)衬底材料,对全耗尽SOI CMOS工艺进行了研究,并发出了N+多晶硅栅全耗尽SOI CMOS器件及电路工艺,获得了性能良好的器件和电路。
3)fully depleted SOI全耗尽SOI
4)fully depleted SOI MOSFET全耗尽SOIMOSFET
1.Analytical threshold voltage model for fully depleted SOI MOSFETs;全耗尽SOIMOSFET阈值电压解析模型
5)Fully depleted device全耗尽器件
6)fully depleted SOI-MOSFET全耗尽SOI-MOSFET
1.A novel approximation of the two-dimensional(2D)potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.对垂直于沟道的二维电势分布函数提出了一种新的近似,给出了基于这种近似的杂质浓度呈高斯分布的非均匀掺杂全耗尽SOI-MOSFET的阈值电压解析模型。