1)pHEMT赝配高电子迁移率晶体管
1.Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement-and Depletion-Mode PHEMTs;单片集成0·8μm栅长GaAs基InGaP/AlGaAs/InGaAs增强/耗尽型赝配高电子迁移率晶体管
2.MBE Growth of InP Based PHEMT Epitaxial Materials;分子束外延生长InP基赝配高电子迁移率晶体管外延材料
英文短句/例句
1.MBE Growth of InP Based PHEMT Epitaxial Materials;分子束外延生长InP基赝配高电子迁移率晶体管外延材料
2.Monolithic Integration of GaAs Enhancement/depletion-mode PHEMTs单片集成GaAs增强/耗尽型赝配高电子迁移率晶体管
3.high electron mobility transistor高电子迁移率晶体管
4.A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;AlGaN/GaN高电子迁移率晶体管的模型研究
5.Nonlinear Electrical Transport Properties and Mobility in Colossal Magnetoresistance (CMR) Field-effect Transiators (FETs);LCMO巨磁阻场效应晶体管的非线性电子输运特性及迁移率的研究
6.The mobility and the lifetime of minority carriers in polysilicon films are two key parameters of current gain increment.多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.
7.The magnitude of electron mobility is indicative of the frequency of the events that free electrons, being acted on by an electric field, are scattered by imperfection in the crystal lattice.自由电子在电场的作用下，会由于晶体中的杂质而发生散射，迁移率就是指这种散射发生的频率。
8.The electron is able to travel through the crystal as easily as through a metal.这个电子像穿过金属一样很容易在晶体中迁移。
9.transistor matched power gain晶体管匹配功率增益
10.Electron Mobility in Heterojunctions and Its Hydrostatic Pressure Effect;半导体异质结中的电子迁移率及其压力效应
11.Design of Microwave Power Transistor Amplifier's Match Circuit微波功率晶体管放大器匹配电路的设计
12.A Test Device of the Drift Mobility for Non-Crystal Photoconductive Materials非晶光电导材料漂移迁移率的测试装置
13.power static-induction transistor功率静电感应晶体管
14.carrier drift transistor载流子漂移型晶体管
15.Photocarrier Transport in Potassium Lithium Tantalate Niobate Crystal钽铌酸钾锂晶体载流子迁移性能研究
16.field-effect HF power transistor场效应高频功率晶体管
17.High-mobility transparent conducting IMO thin films grown by reactive electron beam vapor deposition电子束沉积生长高迁移率IMO透明导电薄膜的研究
18.Study of Electric Ray Annealing on High Power Transistor Chip低频大功率晶体管芯片的电子束退火研究
相关短句/例句
GaAs power PHEMT砷化镓功率赝配高电子迁移率晶体管
3)enhancement PHEMT增强型赝配高电子迁移率晶体管
1.5μm enhancement PHEMT technology.报道了一种用于卫星通讯系统,基于0·5μm栅长增强型赝配高电子迁移率晶体管的两级级联微波单片低噪声放大器。
4)PHEMT赝配结构高电子迁移率晶体管
1.PHEMT material and device;概述了微波毫米波赝配结构高电子迁移率晶体管材料的结构特性,研究了该材料的分子束外延生长工艺,并且报道了用这种材料研制的赝配结构高电子迁移率晶体管的器件研制结果。
5)pseudomorphic high electron mobility transistor(PHEMT)赝配高电子迁移率晶体管(PHEMT)
6)Pseudomorphic High Electronic Mobility Transistors(PHEMT)赝配高速电子迁移率晶体管
延伸阅读
高电子迁移率晶体管（highmobilitytransistor）高电子迁移率晶体管（highmobilitytransistor）利用异质结或调制掺杂结构中二维电子气高迁移率特性的场效应晶体管。其低温、低电场下的电子迁移率比通常高质量的体半导体的场效应晶体管高1000倍，可实现高速低噪音工作。
