1)B-SIT双极性静电感应晶体管
2)BSIT双极型静电感应晶体管
1.The Physical Research on the Dynamic Performance of BSIT;双极型静电感应晶体管动态性能的物理研究
2.Great attention has been paid to the Bipolar static Induction Transistor(BSIT) for its advantages, such as high current gain, low voltage arop and high turn on and turn off spead, etc.双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注。
英文短句/例句
1.Analysis on the regime change of the BSIT Characteristics双极型静电感应晶体管特性转变机理分析
2.Series programmes for static induction transistorsGB/T16468-1996静电感应晶体管系列型谱
3.junction gate static induction transistor结栅静电感应晶体管
4.power static-induction transistor功率静电感应晶体管
5.The Analysis of the Operational Mechanism of Organic Static Inductive Transistor;有机静电感应晶体管工作机理的解析
6.The Research of the Operational Properties of Organic Static Induction Transistor;有机静电感应晶体管工作特性的研究
7.bipolar fet integrated circuit双极 场效应晶体管集成电路
8.Effects of Stress on Bipolar Transistor Performance Parameters应力对双极型晶体管参数性能的影响
9.equivalent circuit of bipolar transistor双极晶体管等效电路
10.heterojunction bipolar transistor异质结双极型晶体管
11.In the 1960s the IC market was broadly on bipolar transistors.六十年代集成电路市场主要为双极型晶体管。
12.double-diffused phototransistor双扩散型光电晶体管
13.The Manufacture and Research on the Operational Properties of Organic Static Induction Transistor有机静电感应晶体管的制作及特性研究
14.unipolar field effect type transistor单极场效应型晶体管
15."Application of the Transistor Charge Control Model to Predict RTL and DTL Transient Response"应用晶体管电荷控制模型预示电阻-晶体管逻辑和二极管-三极管逻辑电路的瞬态响应
16.A transistor having highly photosensitive electrical characteristics.光电晶体管具有极强的感光电动特点的晶体管
17.On Static Induction Thyristors (SITH);静电感应晶闸管(SITH)的研究
18.Analysis of SITHs Negative-Resistance Characteristic静电感应晶闸管的负阻转折特性分析
相关短句/例句
BSIT双极型静电感应晶体管
1.The Physical Research on the Dynamic Performance of BSIT;双极型静电感应晶体管动态性能的物理研究
2.Great attention has been paid to the Bipolar static Induction Transistor(BSIT) for its advantages, such as high current gain, low voltage arop and high turn on and turn off spead, etc.双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注。
3)power Transistor/MBSIT电力晶体管/MOS控制双极型静电感应晶体管
4)SIT[英][s?t][美][s?t]静电感应晶体管
1.A Study on Electrical Parameters of SIT;静电感应晶体管(SIT)电性能参数的研究
2.The gate region of conventional SIT(static induction transistor)is usually prepared by B diffusion in n-type Si,the preparation is complex and high in cost,so a new recessed-gate Schottky barrier SIT was proposed.传统的静电感应晶体管多采用扩硼的方法制备栅极区,这种工艺热预算较高,使得工艺复杂程度和生产成本较高,基于此提出并设计了一种新型的槽栅型肖特基势垒静电感应晶体管。
5)static induction transistor静电感应晶体管
1.Methods for improving the high current performance of static induction transistor (SIT) are presented.描述了改善静电感应晶体管(SIT)大电流特性的新方法。
2.The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.研究了静电感应晶体管(SIT)在大注入情况下出现的空间电荷效应,分析了空间电荷效应的物理机制。
3.A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.针对埋栅型静电感应晶体管 (SIT)提出一种柱栅模型 。
6)switching characteristic/bipolar static inductive transistor开关特性/双极型静电晶体管
延伸阅读
静电感应静电感应electrostaticinduction导体受带电体影响使其表面不同部分出现正、负电荷的现象。在带电体产生的外电场的影响下，导体内的自由电子定向漂移，使导体两端出现正、负电荷，并产生附加电场。当附加电场与外电场在导体内部处处抵消，即导体内部处处总电场为零时，达到静电平衡。若导体原来不带电，则两端的感应电荷等量异号，代数和为零；若导体原来带电，则两端感应电荷的代数和应等于导体原来的电量。导体的静电平衡条件是其内部场强处处为零，故电荷只能分布在导体表面（确切地说是分布在很薄的表面层），整个导体是等势体，表面是等势面，导体表面外附近的电场强度的方向与表面垂直，场强的大小与该处的面电荷密度成正比。
