共振隧穿二极管,resonant tunneling diode英语短句,例句大全

共振隧穿二极管,resonant tunneling diode
1)resonant tunneling diode共振隧穿二极管
1.Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode极化效应对AlN/GaN共振隧穿二极管电流特性的影响
2.The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性。
3.A new type of planar resonant tunneling diode(RTD) was fabricated by ion implantation.采用离子注入方法制作了一种新型平面共振隧穿二极管(RTD),通过离子注入将器件之间进行隔离,避免了传统台面型RTD中采用的台面刻蚀所带来的一些缺点,并且表现出良好的I-V特性,峰谷电流比为3。

英文短句/例句

1.Research of Resonant Tunneling Diode on GaAs Substrate;GaAs衬底共振隧穿二极管的研究
2.Study on Planar Resonant Tunneling Diode and Resonant Tunneling Transistor and Their Applications;平面型共振隧穿二极管与共振隧穿晶体管的研究与应用
3.Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4)共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)
4.Design on the Material Structure of RTD:Lecture of RTD(5)共振隧穿二极管的材料结构设计——共振隧穿器件讲座(5)
5.Study of Si/SiGe-based p-type Resonant Tunneling Diode;基于Si/SiGe的空穴型共振隧穿二极管的研究
6.Investigation on the Spin Transport Properties of GaMnN-based Ferromagnetic RTDGaMnN基共振隧穿二极管自旋器件的设计和模拟
7.Design of Chua's Circuit Based on Resonant Tunneling Diodes基于共振隧穿二极管的蔡氏电路设计研究
8.Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diodeGaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响
9.Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode极化效应对AlN/GaN共振隧穿二极管电流特性的影响
10.Comparison and Analysis on Measurement Method of Resonant Tunneling Diode Series Resistance共振隧穿二极管串联电阻测量方法的比较与分析
11.tunnel diode negative resistance oscillator隧道二极管负阻振荡器
12.Realization of InP-base Resonant Tunneling Diodes Through Air-bridge Technology利用空气桥技术实现InP基共振遂穿二极管器件
13.yig-tuned tunnel-diode oscillator钇铁石榴石调谐隧道二极管振荡器
14.High performance resonant cavity light emitting diodes for POF application用于POF的高性能共振腔发光二极管
15.The Study on the Resonant Tunneling and Lifetime of Resonant State in a Spherical Quantum Dot;球型量子点中共振隧穿及共振态寿命的研究
16.Study of GaAs-Based Resonant Tunneling Piezoresistor Accelerometer;GaAs基共振隧穿压阻式加速度计研究
17.The Influence of Hydrostatic Pressure on Resonent Tunneling for Ⅲ-Ⅴ Group Quantum Wells;静压对Ⅲ-Ⅴ族量子阱共振隧穿的影响
18.Study of GaAs-Based Resonant Tunneling Piezo-resistive Acoustic Sensor;GaAs基共振隧穿压阻式声传感器研究

相关短句/例句

RTD共振隧穿二极管
1.Photodetector and Optical Modulator with RTD Structure;共振隧穿二极管型光探测器和光调制器
2.Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4);共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)
3.Design of RTD-Based TSRAM;基于共振隧穿二极管的TSRAM设计(英文)
3)planar resonant tunneling diodes平面型共振隧穿二极管
1.To resolve the undercut problem in the fabrication of conventional resonant tunneling diodes,a method was proposed for the fabrication of planar resonant tunneling diodes in N~+GaAs substrate through ion implant.为了解决传统台面型共振隧穿二极管制作过程中横向钻蚀问题,提出了一种采用离子注入法在N+GaAs衬底上制作平面型共振隧穿二极管,通过离子注入对器件之间进行隔离,取代了台面制作工艺中的通过湿法腐蚀隔离器件的目的。
2.In this thesis, the fabrication of planar resonant tunneling diodes and mesa-type resonant tunneling diodes, the measurement and analysis of MOBILE(monostable-bistable transition logic element)circuit cell build up by planar resonant tunneling diodes, the measurement and analysis of series resistance of resonant tunneling diodes, and fabrication of resonant tunneling transistor are studied.本论文包括了平面型共振隧穿二极管的研制、台面型共振隧穿二极管的制作、由平面型共振隧穿二极管组成的MOBILE单元电路设计与测试、共振隧穿二极管的串联电阻的分析与测试以及共振隧穿晶体管的研制等研究内容。
4)resonant tunneling diode (RTD)共振隧穿二极管(RTD)
5)DBRT diodes双垫垒共振隧穿二极管
6)PRTD平面型共振隧穿二极管
1.Planar resonant tunneling diode(PRTD)based on n+ GaAs substrate and self-aligned B implantation was fabricated.采用n+GaAs衬底和自对准B离子注入技术制作了平面型共振隧穿二极管,深入讨论其制作过程中几个关键问题,包括离子注入能量与剂量的选择、RTD负阻区表观正阻现象等,并系统地研究了快速合金工艺温度和时间对于制作良好欧姆接触和消除负阻区表观正阻的影响。