1)S-dopedS掺杂
英文短句/例句
1.Sulfur Doped Nanocrystalline Titanium Didxide Photocatalyst: In-situ Synthesis and Photocatalysis under Visible Light;S掺杂TiO_2纳米光催化剂的原位合成及其可见光催化性能研究
2.Preparation and Photocatalytic Reactivity of S-doped TiO_2 Nanoparticles;可见光响应型S掺杂TiO_2薄膜光催化剂的制备及其活性的研究
3.First-principles Study of Cadmium Sulfide Clusters and S Doped Wurtzite ZnO;硫化镉团簇与S掺杂纤锌矿ZnO的第一性原理研究
4.HYDROTHEMAL SYNTHESIS AND VISIBLE-LIGHT PHOTOCATALYTIC ACTIVITY OF S DOPED ZnS NANOCRYSTALSS掺杂ZnS纳米晶的水热合成及其可见光光催化活性
5.First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnOS掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究
6.Preparation of TiO_2 Photocatalyst Coupling Doped with S and N ElementsS,N耦合掺杂TiO_2光催化剂制备
7.Preparation of N,S-Co-doped P25 PhotocatalystN,S共掺杂纳米P25光催化剂制备
8.Preparation and photoluminescence properties of chloride and sulfur co-doped zinc oxide phosphorCl~-,S~(2-)共掺杂氧化锌荧光粉的制备及发光性能
9.Preparation of TiO_2 Photocatalyst Co-Doped with Zr and SZr和S共掺杂TiO_2光催化剂的制备及性能
10.First-Principles Investigation on Pd_n、Pd_(n-1)S Clusters and the Phenomena about Blue-shift in the GaN by Al-doping;Pd_n、Pd_（n-1）S团簇与Al掺杂GaN致使蓝移现象的第一性原理研究
11.The Preparation and Photocatalytic Activitiy of Nonmetal (N, S) Doped Nano-TiO_2非金属元素（N、S）掺杂纳米TiO_2的制备及光催化性能研究
12.Study on Photocatalytic Degradation of Reactive Dyes by using S-N Co-doping TiO_2 Carried Fabric织物负载S-N共掺杂TiO_2薄膜的光催化降解活性染料研究
13.PREPARATION AND VISIBLE-LIGHT-INDUCED PHOTOCATALYTIC ACTIVITY OF C,N,S-TRIDOPED TITANIUM DIOXIDE POWDERSC,N,S-掺杂二氧化钛粉体的制备及其可见光光催化性能
14.Synthesis and Electrochemical Properties of S-M (M=Cu,Co,Ti) Co-doped Layered LiMnO_2 Cathode MaterialsS-M(M=Cu,Co,Ti)复合掺杂层状LiMnO_2的合成及其电化学性能
15.Preparation of S and metal co-doped TiO_2 and their photocatalytic activitiesS与金属共掺杂TiO_2催化剂的制备及其光催化性能
16.Preparation、Characterization and Photocatalytic Activities of Low Amount La~(3+)-doped S-TiO_2 Photocatalysts低量La~(3+)掺杂S-TiO_2光催化剂的制备、表征及其光催化活性
17.A substance that adulterates.掺杂物掺有杂质的物质
18.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
相关短句/例句
sulfur-dopedS掺杂
3)S-N co-dopingS-N共掺杂
4)Ag/S/C dopingAg/S/C掺杂
5)Fe and's Co-dopingFe、S共掺杂
6)N,S-codopingN、S 共掺杂
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
