1)GaN filmsGaN薄膜
1.Thickness measurement of GaN films by X-ray diffraction;基于X射线衍射的GaN薄膜厚度的精确测量
2.GaN films have been grown on Si(111) substrates with a thin AlN buffer layer using a KrF excimer pulsed laser deposition(PLD) assisted by direct current discharge.采用准分子脉冲激光 ,在Si(111)衬底上生长了带有AlN缓冲层的GaN薄膜 ,利用X射线衍射 (XRD)、原子力显微镜 (AFM )和光致发光光谱 (PL)等测试手段研究了不同沉积温度所生长的GaN薄膜结构特征和光学性能 。
3.GaN films have been grown on sapphire substrate which is treated by chemical method with different etch time by LP-MOCVD.采用化学方法腐蚀c-面蓝宝石衬底,以形成一定的图案;利用LP-MOCVD在经过不同腐蚀时间的蓝宝石衬底上外延生长GaN薄膜。
英文短句/例句
1.The Synthesis of One-dimensional GaN Nanostructure and GaN Film by CVD;CVD法合成一维GaN纳米结构和GaN薄膜的研究
2.Preparation and Properties of One-dimension GaN Nanostructures and GaN Thin Films;一维GaN纳米结构和GaN薄膜的制备及其特性研究
3.Deposition and Sn Doping of Amorphous GaN Thin Films at Low Temperature;非晶GaN薄膜低温沉积及其锡掺杂研究
4.Study of Structure and Optical Characteristics of GaAs/GaN Grown by Molecular Beam EpitaxyMBE生长GaAs/GaN薄膜结构与光学特性研究
5.Growth and Property of AlInGaN Films and GaN-Based DBRsAlInGaN薄膜及GaN基DBR的生长和特性研究
6.Transmission Spectra of GaN and AlGaN FilmsGaN及AlGaN薄膜透射光谱的研究
7.Lateral epitaxial overgrowth GaN thin film with MOCVDMOCVD法横向外延过生长GaN薄膜
8.Characteristic Analysis and Preparation of GaN Film by Sol-gel MethodGaN薄膜的溶胶-凝胶法制备及其表征
9.Study of Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire by MOCVD;蓝宝石衬底MOCVD横向外延过生长GaN薄膜的研究
10.Pulsed Laser Deposited GaN Film and the Effect of ZnO Buffer Layer;脉冲激光沉积GaN薄膜及ZnO缓冲层的影响
11.Low-temperature Growth and Characteristic Analysis of GaN Films on Glass Substrate;玻璃衬底上低温沉积GaN薄膜及其特性分析
12.Preparation and Properties of a-GaN Films and Alignment of CNTs by LB Technique非晶GaN薄膜的制备及性能和碳纳米管的LB排布
13.Effect of Heat Treatment on the Quality of Gallium Nitride Epilayers by MOCVD热处理对MOCVD外延生长GaN薄膜性能的影响
14.Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology异质外延GaN薄膜中缺陷对表面形貌的影响
15.Study on the Synthesis and Property of GaN Nanowires and Films;GaN纳米线和薄膜的制备及其特性研究
16.Study of the Nitration Processing in GaN Growth and the Growth of GaMnN Film;GaN生长中氮化工艺及GaMnN薄膜生长研究
17.Analysis of Surface Transformation State of Epitaxial GaN-Based Films by Using RHEED外延GaN基薄膜表面应变演变RHEED分析
18.GaN Semiconductor Thin Film Prepared by Chemical Vapor Deposition化学气相沉积GaN半导体薄膜的研究
相关短句/例句
GaN filmGaN薄膜
1.Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE;蓝宝石邻晶面衬底MBE生长GaN薄膜的瞬态光电导弛豫特性研究
2.A new method to grow high quality GaN film by MOCVD;一种外延生长高质量GaN薄膜的新方法
3.GaN films have been grown by LP-MOCVD on the sapphire substrate,which a half of it is treated by chemical etch.采用化学方法腐蚀部分c面蓝宝石衬底,在腐蚀区域形成一定的图案,利用LP-MOCVD在经过表面处理的蓝宝石衬底上外延生长GaN薄膜。
3)GaN thin filmGaN薄膜
1.The research of laser treatment of GaN thin film;激光处理GaN薄膜的研究
2.It is helpful to achieve dense and well-crystallized GaN thin films with higher temperature and longer maintain time.结果表明:当沉积温度大于1100℃时,可在Si(111)基板表面上沉积微晶GaN薄膜;随沉积温度的升高,薄膜的结晶程度提高,取向性增强;延长保温时间有利于沉积更为致密而结晶良好的薄膜;薄膜的面电导率随外电场强度的增加而增加;在强电场作用下,电流密度与电场强度不再服从欧姆定律关系;PL谱分析表明所制备的薄膜具有463 nm、488。
4)GaN thin filmsGaN薄膜
1.The GaN thin films were grown on Si(111) substrate by Mg-doping simultaneously using a pulsed laser two-beam deposition system.采用脉冲激光双光束沉积系统在Si(111)衬底上生长了掺Mg的GaN薄膜和未掺杂GaN薄膜。
2.These defects can seriously affect the performance of GaN thin films, thus affecting the GaN-based devices.GaN基片的研究目前几乎全部集中在异质材料上外延生长的薄膜,其外延生长过程也不可避免的产生缺陷结构,这些缺陷结构会严重影响GaN薄膜的性能,从而影响各种GaN基器件的性能。
5)GaN[英][ɡ?n][美][g?n]GaN薄膜
1.GaN films synthesized through reactively reconstructing Ga_2O_3 films sputtered on Ga-diffused Si substrates;硅基扩镓溅射Ga_2O_3反应自组装GaN薄膜
2.In recent years, GaN-based optoelectronic materials and devices have been rapidly developed, however, there has not full studied in GaN thin films.国内外许多研究小组利用透射电子显微术和X射线衍射对GaN薄膜位错的研究集中在用不同的测试方法对位错密度的分析，但通过这些方法表征的位错密度与器件发光性能存在矛盾。
3.As an importantⅢ-Ⅴgroup s nitride,GaN has been applied in many fields such as photo-electricity devices,light detectors and novel microelectronics devices etc because it almost owns all the typical merits of wide-band-gap semiconductors.然而由于GaN材料性质特殊,高质量高性能GaN薄膜的获得存在困难,GaN的高效掺杂仍然不易实现,掺杂条件与GaN薄膜结构及电学特性都有着较为复杂的关系,一些重要的相关物理现象和具体机理仍不是很明确,这在一定程度上阻碍了GaN材料应用的快速发展。
6)nanocrystal GaN filmnc-GaN薄膜
延伸阅读
gallium nitride GaN分子式：CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。
