栅介质,gate dielectric英语短句,例句大全

栅介质,gate dielectric
1)gate dielectric栅介质
1.In this paper, the carrier mobility, source voltage, current in channel, and avalanche generation under the gate dielectric of VDSM n-channel Si-MOSFET are analyzed by changing the gate voltage, the source voltage, the drain voltage and the thickness of gate oxide.通过改变Si-MOSFET的栅电压、源电压、漏电压和栅氧化层厚度等参数,分析和求解栅介质下载流子迁移率、沟道内电流密度、电场、雪崩产生密度以及隧穿电流的变化,得出当源、漏偏压分别为0。
2.The reliability of strain silicon,gate dielectric and copper interconnection are discussed,and some new researches are presented.简介了应变硅材料、栅介质的工艺及铜互连的可靠性,并对新的研究方向做了介绍。
3.The method of modulating the gate dielectric growth,the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds.对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。

英文短句/例句

1.Physical and Electrical Properties of ZrO_2 Gate Dielectrics Film高介电栅介质ZrO_2薄膜的物理电学性能
2.Preparation and Property of High-k HfO_2 Gate Dielectric Materials高介电常数HfO_2栅介质的制备及性能
3.Gate Leakage Properties of Small-Scaled High-k Gate Dielectric MOS Devices;小尺寸高k栅介质MOS器件栅极漏电特性研究
4.Electrical Properties of High-k Gate Dielectric SiGe MOS Devices;高k栅介质SiGe MOS器件电特性研究
5.Study on Surface and Interfacial Characteristics of HfO_2 High-k Gate DielectricHfO_2栅介质的表面界面特性研究
6.Influences of Different Interlayers on Properties of MOS with HfTaON Gate Dielectric不同界面层对HfTaON栅介质MOS特性的影响
7.Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics超薄高k栅介质Ge-pMOSFET的电特性研究
8.Thermal stability and electrical properties of high-k LaErO_3 films作为高介电常数栅介质材料的LaErO_3薄膜热稳定性和电学性质的研究
9.Model and Technology of High-k Gate Dielectric MOS Devices;高k栅介质MOS器件模型和制备工艺研究
10.Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric;小尺寸MOSFET阈值电压模型及高k栅介质制备
11.Modeling and Preparation of High-κ Gate Dielectric Ge-Based MOS Devices;高κ栅介质Ge基MOS器件模型及制备工艺研究
12.Gate Dielectric Breakdown of Very-Deep Sub-micron n-channel Si-MOSFET;超深亚微米n沟道Si-MOSFET中栅介质的击穿
13.Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics高K栅介质HfSi_xO_y薄膜的制备工艺与结构分析
14.Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film反应溅射SiO_xN_y栅介质薄膜的成分及C-V特性研究
15.Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3N_2和NH_3退火对铪铝氧栅介质C-V特性的影响
16.Fabrication and Characteristics Study of Hf-based High-k Gate Dielectrics Thin Films;铪基高介电常数栅介质薄膜的制备及其物性研究
17.Physical and electrical properties of the high-κ dielectrics with Ni and Al inclusion in HfO_2高介电栅介质材料HfO_2掺杂后的物理电学特性(英文)
18.Analysis of Performance of 0.25 μm Dielectric Defined Gate and Normal Process Gate PHEMTs0.25μm介质栅与非介质栅PHEMT的性能比较分析

相关短句/例句

gate oxide栅介质
1.6nm gate oxide into substrate is investigated by electrical and SIMS measurements.p+ 多晶硅栅中的硼在 Si O2 栅介质中的扩散会引起栅介质可靠性退化 ,在多晶硅栅内注入 N+ 的工艺可抑制硼扩散。
2.Effects of post poly-Si annealing (PPA) o n gate oxide reliability are studied experimentally.实验研究表明 ,多晶硅后的高温退火明显引起热 Si O2 栅介质击穿电荷降低和 FN应力下电子陷阱产生速率增加。
3)SiO_xN_y gate dielectricsSiOxNy栅介质
4)dielectric grating介质栅
1.Characteristics of electromagnetic band-gap structure with stratified crossed dielectric gratings;交错叠层型介质栅电磁带隙结构的特性
2.A new type of dielectric grating waveguide filter based on left-handed material(LHM) was proposed and its band-rejected characteristics were carefully analyzed by a method which combines the rigorous mode matching procedure with multimode network method.提出了一种新型的基于左手介质的介质栅波导阻带滤波结构,并采用多模网络与严格模匹配相结合的方法,对该左手介质栅波导阻带滤波特性进行仔细严格的分析;给出了主模的B rillou in图,以及滤波结构的归一化中心频率、阻带的宽度和带内最大衰减等特性和结构参数的关系,并与传统右手介质栅波导作了比较,说明了产生两者不同特性的原因。
5)SiO2 gate dielectricsSiO2栅介质
1.Some problems of SiO2 gate dielectrics, requirements for high k materials as MOSFET gate dielectrics and the latest development of high k gate dielectrics instead of traditional SiO2 were reviewed.综述了超薄SiO2栅介质层引起的问题、MOS栅介质层材料的要求、有希望取代传统SiO2的高k栅介质材料的研究进展。
6)MOSFET-gate dielectricMOSFET栅介质
1.The new research of MOSFET-gate dielectric was summarized.本文综述了MOSFET栅介质的最新研究状况。