机械抛光,mechanical polishing英语短句,例句大全

机械抛光,mechanical polishing
1)mechanical polishing机械抛光
1.The study on the optimizational technology of the large area free-standing diamond films mechanical polishing;大面积金刚石自支撑膜机械抛光的优化工艺研究
2.This paper introduced a precision polishing experiment study on H62(φ80mm)brass with traditional precision mechanical polishing method.本文采用传统的精密机械抛光方法,对H62黄铜(φ80mm)进行了精密抛光实验研究。
3.On the basis of briefly reviewing the polishing process techniques of chemically vapor deposited diamond films,an primary investigation on mechanical polishing processes for chemically vapor deposited diamond thick films was carried out using automatic polishing, as well as during polishing process, were observed by means of scanning electron microscope.在简要综述 CVD金刚石膜光整加工方法的基础上 ,在自动抛磨机上对 CVD金刚石厚膜进行了初步的机械抛光工艺研究 ,借助扫描电子显微镜 (SEM)对抛光前后及抛光过程中 CVD金刚石膜的表面形貌变化进行了观察 ,初步讨论了 CVD金刚石的去除过程。

英文短句/例句

1.Study on Conditioner for Polishing Pad in CMP;化学机械抛光用抛光垫修整器的研究
2.Study on Electrochemical Mechanism and Polishing Rate of Chemical-Mechanical Polishing of Copper;铜化学-机械抛光电化学机理与抛光速率的研究
3.Study on Conditioning Technology of Polishing Pad in CMP;化学机械抛光中抛光垫修整技术的研究
4.Chemical mechanical polishing for silicon wafer by composite abrasive slurry利用复合磨粒抛光液的硅片化学机械抛光
5.Study on CMP Slurry of CVD Diamond Film;CVD金刚石膜化学机械抛光液的研制
6.Electroplate and chemical mechanical polishing technology of ULSIVLSI的电镀和化学机械抛光技术
7.Material removal characteristic of silicon wafers in chemical mechanical polishing单晶硅片化学机械抛光材料去除特性
8.ECMP of Cu in the Preparation Process of ULSIULSI制造中Cu的电化学机械抛光
9.Study on Electrochemistry and Polishing Rate of Chemical Mechanical Polishing of Semiconductor Silicon Wafer;半导体硅片化学机械抛光电化学与抛光速率研究
10.Study on Pad Properties & Effects on Processing in CMP;抛光垫特性及其对化学机械抛光效果影响的研究
11.Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer硅片化学机械抛光加工区域中抛光液动压和温度研究
12.Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
13.Influencing Factors of Conditioning Effect about Polishing Pad Conditioning for Chemical Mechanical Polishing化学机械抛光用抛光垫的修整对修整效果的影响因素
14.Study the application of pad in chemical mechanical polishing for sapphire wafer抛光垫在蓝宝石衬底化学机械抛光中的应用研究
15.Study on Chemical Mechanical Polishing of Tantalum Lithium Crystal Wafer;光电子材料钽酸锂晶片化学机械抛光过程研究
16.Fluorescence enhancement of Rh6G on mechanically polished metallic substrates机械抛光金属衬底表面对Rh6G的荧光增强效应
17.Study on Material Removal Mechanism for Non-contact CMP;非接触化学机械抛光的材料去除机理研究
18.Specification: Metal ingot, mechanically polished, the detailed specification can be customized in size according to your request.形状：金属锭，机械抛光，每块大小可按顾客的要求。

相关短句/例句

mechanical polisher机械抛光机
3)chemical-mechanical polishing machine化学机械抛光机
4)chemical mechanical polishing化学机械抛光(CMP)
5)chemical mechanical polishing(CMP)化学机械抛光(CMP)
6)chemical mechanical polishing(CMP)化学机械抛光
1.Presents a sequence of order-of-magnitude calculations based on the concepts of chemical kinetics and transport phenomena during the chemical mechanical polishing(CMP) process.考虑抛光液/芯片的相界面氧化剂浓度和芯片氧化薄膜缺陷对材料去除机理的影响,提出化学机械抛光(CMP)中材料去除机理的量级估算方法,应用化学动力学及传质学等理论估算氧化薄膜的扩散深度量级和生成速率,采用纳米压痕仪模拟单个磨粒在芯片表面的压痕作用,应用线性回归方法分析载荷70 nN下,磨粒压入芯片的深度量级为10-11m。
2.Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably.抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
3.For high-quality and high-efficiency chemical mechanical polishing(CMP) of multilayer interconnection in ultralarge-scale integrated(ULSI) circuit,the silica sol nano-abrasive with large-particle and lowpolydispersition was prepared by polymerization growth technique with control of constant liquid level.为满足甚大规模集成电路(ULSI)互连结构高质量、高效率化学机械抛光(CMP)的要求,以LaMer模型为理论指导,对恒液面聚合生长法制备大粒径、低分散度硅溶胶研磨料的粒径增长阶段进行了机理分析,并讨论了加料速率对平均粒径及分散度的影响;优化加料速率为3。