1)secondary recrystallization二次再结晶
1.At the starting temperature of secondary recrystallization, 950℃, a certain Sn still segregates at grain boundaries.在二次再结晶起始温度950℃,Sn在晶界仍有一定的偏聚量,作者认为,Sn通过在晶界偏聚起到了辅助抑制剂的作用。
2.The results show that final microstructure of the hot-rolled sheet is coarse-grained structure as a result of the occurrence of secondary recrystallization,but the cold-rolled sheet has only a primary recrystallization.结果表明,MGH754合金热轧板材的终态组织是发生了二次再结晶的粗晶组织,而冷轧板材只发生了一次再结晶。
3.The results show that transverse rolling sheet could create comparatively perfect structure due to the occurrence of secondary recrystallization.结果表明:由于发生了相对完全的二次再结晶,横向轧制板材能得到理想的终态组织。
英文短句/例句
1.Determination method for secondary recrystallization temperature of tungsten wireGB/T4106-1983钨丝二次再结晶温度测量方法
2.Effect of precipitated phase particles on secondary recrystallization in grain oriented silicon steel析出相质点对取向硅钢二次再结晶的影响
3.On the Re-crystallization Properties of Tungsten Wire Used in Manifolder Halogen Lamp by Press Processing压力加工过程对复印机卤素灯用钨丝二次再结晶性能的影响
4.FEM simulation of hot rolling process in the second pass considering dynamic recrystallization in the first pass考虑一道次动态再结晶的二道次热轧仿真
5.Primary recrystallization microstructure of low temperature hot roll oriented silicon steel bearing copper含铜低温热轧取向硅钢初次再结晶组织研究
6.Recrystallization behavior of 7050 aluminum alloy during multi-pass hot compression process多道次热压缩过程中7050铝合金的再结晶行为
7.Phase field simulation on recrystallization and secondary phase precipitation under strain field再结晶和外力场下第二相析出的相场法模拟
8.Two-dimensional numerical simulation of dynamically recrystallized grain change of new steel 33Mn2V for oil well tubes in tube-piercing process新型油井管钢33Mn2V穿管过程动态再结晶晶粒变化的二维数值模拟
9.Modeling the Process of Dynamic Recrystallization of Pure Copper and Nickel Using Two-dimensional Cellular Automata;纯铜及纯镍动态再结晶过程的二维元胞自动机模拟
10.Study on Modeling and Simulation of Recrystallization Annealing Process for Material with Second Phase Particle by Cellular Automata Method;二相粒子材料再结晶退火的元胞自动机模型及其模拟研究
11.Investigation of Luminescence Mechanism of Hybrid MEH-PPV/SiO_2 and Super Liner Characteristic of Amorphous SiO_2MEH-PPV/SiO_2异质结发光机理和非晶SiO_2二次特性的研究
12.Self-similar transformation and quasi-unit cell construction of quasi-periodic structure with twelve-fold rotational symmetry十二次对称准周期结构的自相似变换及准晶胞构造
13.I was unsuccessful, and I knew it; and tried again, and was again unsuccessful and always unsuccessful;我明白，一次不成功，我就再试一次，结果是接二连三的失败。
14.Microstructure of Surface Recrystallization of Single Crystal Superalloy DD6单晶高温合金DD6表面再结晶组织
15.Simulation of grain growth of AZ31Mg alloy during recrystallization by phase field model相场法模拟AZ31镁合金再结晶晶粒长大
16.Recrystallization on Interface between NiCoCrAlYTa Coating and Nickel-Based Super-AlloyNiCoCrAlYTa涂层/镍基单晶高温合金界面再结晶
17.intermediate sugar mixer二号糖膏搅拌结晶槽
18.Study on Crystalline Structure and Crystallization Kinetics of Syndiotactic 1,2-polybutadiene间规1，2-聚丁二烯结晶结构及结晶动力学研究
相关短句/例句
second crystallization二次再结晶现象
3)secondary recrystallization annealing二次再结晶退火
4)tertiary recrystallization三次再结晶
1.Effect of the cross shear rolling technological parameters on tertiary recrystallization of ultra - thin silicon steel strips;异步轧制对硅钢极薄带三次再结晶的影响
2.1mm in gauge by conventional rolling(CR) and cross shear rolling (CSR) separately, then the finished strips were annealed in furnace in different atmospheres for tertiary recrystallization.采用常规和异步轧制分别将0 3mm厚的成品取向硅钢板冷轧到0 10mm以下,然后在不同气氛的热处理炉中进行三次再结晶高温退火,研究同步、异步轧制条件下,热处理工艺参数(退火温度、保温时间、退火气氛、升温速度)对取向硅钢极薄带的磁性能和三次再结晶行为的影响·结果表明,相同的工艺参数下,真空退火的硅钢极薄带的磁性能优于氢气处理的;退火温度越高,保温时间越长,升温速度越快,磁性能越好,三次再结晶发展得越完善
3.The results indicate that ｛111｝ 〈112〉 and ｛110｝〈001〉texture which are favorable for tertiary recrystallization are increased and disadvan tageous ｛100｝〈011.在真空或氢气保护下进行高温退火 ,研究不同工艺制度对三次再结晶薄带磁性能的影响规律。
5)primary recrystallization一次再结晶
6)secondary crystallization二次结晶
延伸阅读
二次再结晶二次再结晶secondary tecrystallizationg ofCI ZoljleJIng==次再结晶(seeondary reerystalli:ation)又称二次重结晶、异常晶粒长大，或不连续长大。是指少数大晶粒在小晶粒消耗时成核长大的过程。因为晶粒大于6条边界时边界向内凹，而晶粒小于6条边界时边界向外凸.凸面的界面能大于凹面的界面能，因此晶界向凸面曲率中心移动，结果小于6条边的小晶粒缩小，甚至消灭，而大于6条边的大晶粒异常长大. 当正常的晶粒生长由于夹杂物或细孔等的阻碍作用而停止以后，如果在均匀基相中有若干大晶粒，其晶粒边界比邻近晶粒的边界多得多，晶界曲率也较大，大晶粒的界面能较小晶粒低，在界面能驱动下，大晶粒晶界就可以越过气孔或夹杂物而进一步向邻近曲率半径小的小晶粒中心推进，而使大晶粒成为二次再结晶的核心，不断吞并周围小晶粒而迅速长大，直至与邻近大晶粒接触为止。 晶粒二次再结晶生长时，气孔都维持在晶界上或晶界交汇处;即二次再结晶时气孔常被包裹到晶粒内部。 为了得到致密的烧结料，制止二次再结晶是重要的。引入适当添加剂能制止或减慢晶界的迁移，从而使气孔排除，甚至可制得完全无气孔的多晶材料。 (陈攀友)
