抛光液,slurry
1)slurry[英]['sl?ri][美]['sl??]抛光液
1.Study on the performances of polishing slurry in chemical mechanical polishing;CMP抛光半导体晶片中抛光液的研究
2.Preparation of ultra-fined Al_2O_3 slurry and its polishing properties on disk CMP;超细氧化铝抛光液的制备及其抛光特性研究
3.Tantalum barrier layer of copper interconnection in ULSI and optimization of CMP slurry;ULSI多层铜布线钽阻挡层及其CMP抛光液的优化
英文短句/例句

1.double-die-turning finishing hydraulic press双模具翻转抛光液压机
2.Study on CMP Nano-Slurry and Technology;CMP纳米抛光液及抛光工艺相关技术研究
3.Chemical mechanical polishing for silicon wafer by composite abrasive slurry利用复合磨粒抛光液的硅片化学机械抛光
4.Study on CMP Slurry of ULSI Copper Interconnection Layer;ULSI铜互连层CMP抛光液研究
5.Study on CMP Slurry Prescription of SiO_2 ILD;二氧化硅介质层CMP抛光液配方研究
6.Study on CMP Slurry of CVD Diamond Film;CVD金刚石膜化学机械抛光液的研制
7.Numerical Simulation of Slurry Film Lubrication in Chemical Mechanical Polishing Process;CMP过程中抛光液流场数值仿真研究
8.Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer硅片化学机械抛光加工区域中抛光液动压和温度研究
9.Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
10.Effect of acid alkali degree on quality of super smooth surface抛光液酸碱度对超光滑表面质量影响的研究
11.Numerical Simulation and Experimental Research of Slurry Film Characteristic in Chemical Mechanical PolishingCMP中抛光液膜特性的数值仿真和实验研究
12.Development of SiO_2 ILD Chemical Mechanical Polishing Slurry and Its Performance Analysis二氧化硅介质层CMP抛光液研制及其性能研究
13.Preparation of the polishing solution was described.在传统的硫酸抛光液中加入一种淡绿色的粉末晶体。
14.Simultaneous determination of sulfamic acid and DL-malic acid in environmental friendly electropolishing solution by ion chromatography离子色谱法同时测定环保型电镀抛光液中氨基磺酸和DL-苹果酸
15.INFLUENCE OF POLISHING SOLUTION ON ELECTROCHEMICAL BEHAVIOR OF 304SS IN A SIMULATED PEMFC ANODE ENVIRONMENT抛光液对304钢在模拟PEMFC阳极环境中电化学行为的影响
16.Study on Principle of Hydrodynamic Suspension Ultra-smooth Machining and Dynamic Pressure of Polishing;液流悬浮超光滑加工机理及抛光动压力的研究
17.Machining Optical Glass K9 by Using Hydrodynamic Suspension Polishing Technology;利用液流悬浮研抛技术加工光学玻璃K9的研究
18.The Hydroforming of Square Parabolic Reflector of Auto;矩形抛物线车灯反光镜充液拉深实验研究
相关短句/例句

polishing slurry抛光液
1.According to the analysis of the structure of polishing pad,polishing machine and polishing slurry,the merits of fixed abrasives (FA)CMP were presented.经过对传统化学机械抛光技术的研究与分析,指出了目前ULSI制造中使用的传统化学机械抛光技术的缺点,通过对固结磨料化学机械抛光中的抛光垫结构、抛光机原理及抛光液的分析,得出了固结磨料化学机械抛光技术的优点,同时还对硅片固结磨料化学机械抛光的缺陷进行了研究。
2.Based on the analysis of mechanism of silicon polishing, this paper discusses the influence of polishing slurry on polishing quality.在分析硅衬底的抛光机理的基础上,主要讨论了抛光液对硅衬底抛光质量的影响,同时对抛光液中各成分的选择作了分析研究,采用不含钠离子的有机碱和高效的无钠螯合剂减少了金属离子的玷污,对活性剂影响吸附的作用机理进行了分析,得到了一种小粒径、高速率和低损伤的无钠抛光液
3.Many factors may affect LiNbO3 CMP,such as polishing slurry,polishing pad and polishing technological parameters.影响LiNbO3化学机械抛光速率的因素很多,如抛光液组成、抛光垫质量、抛光工艺参数等。
3)polishing solution抛光液
1.Through experiment and analysis, different types of suitable polishing solutions to improve productivity and the quality of polished surface were proposed.通过实验分析,找到适合不同种类光学玻璃的抛光液类型,以有效提高抛光效率,改善抛光表面质量。
2.Under the same experimental condition(same polishing time,temperature and sapphire concentration),four groups of CdSe wafers were polished using four different polishing solutions.采用相同温度、刚玉粉、抛光时间和不同方式配制成抛光液,对4组CdSe晶片进行抛光。
4)slurry film抛光液膜
1.In this model,a Reynolds equation for the slurry flow field was deduced,and the thickness and pressure distribution of slurry film between wafer and polishing pad in chemical and mechanical polishing(CMP) process was simulated by calculation of partial differential equations under different conditions.结果表明,不同抛光速度和抛光载荷下,抛光液膜厚度、液膜压力和晶片倾斜角呈现不同的分布规律。
5)dispersibility and stability纳米抛光液
6)chemical polishing solution化学抛光液
1.From the sustainable development strategic goal, the status and development trends of research on chemical polishing solution for stainless steel are mainly introduced.从可持续发展战略目标出发,主要介绍了国内外不锈钢化学抛光液的研究现状与发展趋势,指出环保型(即无污染物排放)的不锈钢化学抛光液的研究具有广阔的发展前景。
2.Aluminium in spent phosphoric acid-based chemical polishing solution was removed by precipitation process with sodium fluoaluminate and the process conditions for regeneration of the solution were studied.采用氟铝酸钠沉淀法去除失效磷酸基化学抛光液中的铝杂质,并对溶液再生利用的工艺条件进行了研究。
延伸阅读

抛光液分子式:CAS号:性质:硅片去除研磨损伤深度的抛光工艺所用液体材料称抛光液。常见的有二氧化硅抛光液及三氧化铬抛光液。