低压MOCVD,LP-MOCVD
1)LP-MOCVD低压MOCVD
1.Growth and Properties of Single Crystalline GaAs Layer Grown on Si Subtrates by LP-MOCVD;低压MOCVD法生长GaAs/Si单晶膜及膜的特性研究
2.Growth of ZnSe Epilayers on Silicon Substrate by LP-MOCVD;Si衬底上ZnSe外延膜的低压MOCVD生长
3.P-GaN bulk material and p-InGaN/GaN superlattice used as p-contact layer are grown by low pressure metal organic chemical vapor deposition(LP-MOCVD),and their specific contact resistivity(SCR)is measured by circular transmission line model(CTLM).利用低压MOCVD系统,获得了p-GaN和p-InGaN/GaN超晶格结构2种材料,用圆形传输线模型(CTLM)测量了它们的比接触电阻率,并对表面处理、金属沉积和合金化处理的工艺条件进行了优化,得到了550℃、O2氛围下合金30min的最佳条件,获得最低的比接触电阻率为1。
英文短句/例句

1.ZnS, ZnSe Films and ZnSe Quantum Dots Grown by MOCVD;Si衬底上低压MOCVD生长ZnS,ZnSe薄膜和ZnSe量子点
2.Effect of the LP-MOCVD Growth Parameters For Type-Ⅱ InAs/GaSb Superlattices Surface Morphology低压MOCVD生长参量对Ⅱ型InAs/GaSb超晶格材料表面形貌的影响
3.Study of Growth and Doping of ZnO Films by Atmospheric Pressure-MOCVD;ZnO薄膜的常压MOCVD生长及掺杂研究
4.Growth and Properties Study of ZnO Thin Films Grown by Atmospheric Pressure MOCVD;ZnO薄膜材料的常压MOCVD生长和性能研究
5.Structural and Optical Properties Study of ZnO Thin Films Grown by Atmospheric Pressure MOCVD;常压MOCVD生长ZnO薄膜的结构和光学性能研究
6.Undervoltage (Voltage Drop).欠电压(电压降低)。
7.Below normal pressure.低压的低于正常血压的
8.A region of low barometric pressure.低压带气压低的地区
9.Of or at low potential or voltage.低(电)压的低位的或低电压的,或在低电压下的
10.high supercharged engine of low compression ratio低压缩比高增压发动机
11.high back-pressure and low oil pressure trip高背压和低油压脱扣
12.boiling type low-pressure deliver unit沸腾式低压压送装置
13.LPHP hot water heat exchanger低压-高压热水换热器
14.LO-TRIP pressure sensor低压跳闸压力传感器
15.The barometer recorded a low pressure.气压表标明有一低气压。
16.low pressure cylinder regulator低压石油气瓶调压器
17.Study of InGaN Films Grown by MOCVDMOCVD生长的全组分InGaN材料
18.Low pressure, eg of the atmosphere, of gas or water piped to houses, of blood低压(如气压、煤气或自来水压、血压)
相关短句/例句

Photo assisted MOCVD光助低压MOCVD
3)low pressure MOCVD(LP-MOCVD)低压金属有机化学气相外延(LP-MOCVD)
4)MOCVDMOCVD法
1.Investigation of GaP/Si Heteoepitaxy Film by MOCVD;MOCVD法异质外延GaP/Si薄膜的研究
5)MOCVD technologyMOCVD技术
6)LS-MOCVD液态源MOCVD
延伸阅读

MOCVD分子式:CAS号:性质:用金属有机化合物热分解进行气相外延生长的方法。其基本原理是将含有外延材料组分的金属有机化合物气体通过载气输送到反应室,在一定温度下进行外延生长。MOCVD技术主要应用于III-V族II-VI族化合物半导体超晶格量子阱等低维材料生长和多元固溶体的多层异质结构材料的生长,还可用于制备高温超导薄膜,铁电薄膜,传感器薄膜,太阳能电池薄膜及其他金属薄膜。该技术工艺可控,操作简便及适用于大规模生产等优点。其缺点是所用源材料为易燃剧毒物质。