1)lithography[英][l?'θ?ɡr?fi][美][l?'θɑgr?f?]光刻
1.On the development of the study of thick photoresist lithography techniques;厚层抗蚀剂光刻技术研究进展
2.Gray-tone lithography for microopto-device of arbitrary 3D shaped surfaces;任意三维表面微型光器件的灰度光刻技术
3.Design and assembly of projection lithography lens;光刻机镜头的结构设计与装配
英文短句/例句
1.brilliant cutting(玻璃)磨光刻花法
2.raster scan electron beam lithography光栅扫描电子束光刻
3.Over 8 years experience in Implant /Diffusion/ Etch/ Photo process.8年注入/扩散/刻蚀/光刻经验。
4.vector scan electron beam lithography矢量扫描电子束光刻
5.electron chrome mask电子束光刻用铬掩模
6.photoresist controlled etch光刻胶掩蔽控制腐蚀
7.direct write electron beam system直写式电子束光刻装置
8.fine featured resist精细结构光刻用抗蚀剂
9.scaled down lithography按比例缩小光刻技术
10.Research of SU-8 Resist Lithography Using Ultraviolet Laser;紫外激光曝光光刻SU-8胶的工艺研究
11.Phase Shift Mask Monitor Scanner Focus;利用相移光刻掩膜版监测光刻机台焦距
12.Thermal Deformation of EUV Mask and its Influence on Lithographic Performance;极紫外光刻掩模热变形及其对光刻性能的影响
13.The Chemically Amplified Resist Composition and Its Lithography for Electronic Beam;化学增幅光刻胶及其在电子束光刻中的应用
14.Study on Synthesis of Photoresist and Photochemical Process for Information Recording in Laser Disc激光光盘信息记录光刻胶的合成与感光
15.raster scan electron beam system光栅扫描电子束光刻系统
16.Research of Focus Optical System Used in Ultraviolet Photolithography;用于紫外光刻的聚焦光学系统的研究
17.Study on Key Technologies in UV-LED Fiber Lithography System紫外LED光纤光刻系统关键技术研究
18.Alignment System with Multi-Grating Mark for Lithographic Apparatus用于光刻装置的多光栅标记对准系统
相关短句/例句
photolithography[英][,f?ut?li'θ?gr?fi][美][,fotol?'θɑgr?f?]光刻
1.Progress and Development Trend of Photolithography and Photoresist;光刻与光刻胶的研究与发展
2.The analysis of figure′s widen and study of its minished in photolithography and etching for thick photoresist;厚胶光刻蚀刻中的图形展宽分析与改善研究
3.Research on SU-8 resist photolithography process;SU-8胶光刻工艺研究
3)optical lithography光刻
1.To control critical dimension(CD)effectively,bulk effect is studied in hyper-numerical aperture(NA)optical lithography and a novel optimization strategy for resist film stacks is developed to balance bulk effect with appropriate swing effect.为有效控制成像线宽,研究了高数值孔径光学光刻中的体效应并提出一种光刻胶膜层优化方法,利用成像中的摇摆效应平衡体效应对成像线宽的影响。
2.The optical lithography correction techniques become key technologies in the IC designing and manufacturing of VDSM.光刻校正技术已成为超深亚微米下集成电路设计和制造中关键的技术。
3.The quality of optical lithography technology with the existing equipments is remarkably improved.叙述了表面活性剂的性质、分类、分子结构特点,重点介绍了表面活性剂在光刻工艺的涂胶、显影、湿刻工序中的应用。
4)Photoetching光刻
1.Application of photoetching in the integral catalyst bed;光刻技术在整体式层板催化剂床研究中的应用
2.Application of photoetching to liquid hydrodynamic seal;光刻技术在流体动力密封研究中的应用
3.The principle, process and characteristics of diaphragm photoetching were introduced in this paper.介绍了膜片光刻的工艺原理、工艺过程及其特点,论述了利用双面自对准光刻模具与膜片母材厚度之间的关系控制膜片槽深的机理,介绍了光刻膜片在膜片阀中的应用情况,经爆破试验和发动机热试车表明:膜片阀设计合理,膜片光刻工艺可行。
5)Photolithograph[英][,f?ut?'liθ?grɑ:f][美][,fot?'l?θ?,gr?f]光刻
1.By using the photolithograph and coating technology, the metal mesh film on IR substrate is made, the line width of metallic mesh less than 10μm, the period is about 350μm.介绍了利用光刻和镀膜技术 ,在红外基片上制作线条宽度小于 10 μm ,周期约 35 0 μm的金属网栅。
2.The photolithograph of IGCT was introduced.主要介绍了集成门极换流晶闸管(IGCT)的光刻技术。
6)X-ray lithographyX光光刻
1.A new micro fabrication method for sub-wavelength gratings was presented,that is,sub-wavelength line and space pattern were obtained with X-ray lithography and then bulk gratings with high aspect ratio were formed with development.描述了一种新的亚波长光栅的微细加工技术,即X光光刻得到相应的亚微米级的线宽图形,再利用显影技术获得了高深宽比的立体亚波长光栅。
2.A novel sub-wavelength anti-reflection gratings fabrication method — X-ray lithography to obtain sub-wavelength anti-reflection patterns of high aspect ratio bulk structures was developed.首先用X光光刻在PMMA光刻胶上得到相应的亚微米级的线宽图形,再利用显影技术获得了高深宽比的立体亚波长纳米结构,即抗反射结构。
延伸阅读
光刻 ? ±谜障喔粗朴牖Ц聪嘟岷系募际酰诠ぜ砻嬷迫【堋⑽⑾负透丛颖〔阃夹蔚?化学加工方法。光刻原理虽然在19世纪初就为人们所知，但长期以来由于缺乏优良的光致抗蚀剂而未得到应用。直到20世纪50年代，美国制成高分辨率和优异抗蚀性能的柯达光致抗蚀剂(KPR)之后,光刻技术才迅速发展起来，并开始用在半导体工业方面。光刻是制造高级半导体器件和大规模集成电路的关键工艺之一，并已用于刻划光栅、线纹尺和度盘等的精密线纹。 光刻的基本原理是：利用光致抗蚀剂(或称光刻胶)感光后因光化学反应而形成耐蚀性的特点，将掩模板上的图形刻制到被加工表面上。光刻半导体晶片二氧化硅的主要步骤（见图）是：①涂布光致抗蚀剂；②套准掩模板并曝光：③用显影液溶解未感光的光致抗蚀剂层；④用腐蚀液溶解掉无光致抗蚀剂保护的二氧化硅层；⑤去除已感光的光致抗蚀剂层。 光致抗蚀剂是一种对光敏感的高分子溶液，种类很多，根据光化学反应的特点一般可分为正性和负性两大类。凡用显影液能把感光的部分溶解去除的称为正性光致抗蚀剂；用显影液能把未感光的部分溶解去除的称为负性光致抗蚀剂。 光刻的精度很高，可达微米数量级，为使蚀刻线条清晰、边缘陡直、分辨率小于1微米的超微细图形,可采用远紫外曝光、X射线曝光、电子束扫描曝光,以及等离子体干法蚀刻等新技术。 参考书目 李家植编：《半导体化学原理》，科学出版社，北京，1980。
