1)Al-dopedAl掺杂
1.Al-doped ZnO nanorod arrays with different Al doping concentration were grown on ZnO seed layers by hydrothermal method.采用水热法,在ZnO种子层上制备出不同Al掺杂量的ZnO纳米棒阵列薄膜,利用XRD、SEM、TEM、PL等检测手段对样品进行结构、形貌和发光性能分析。
2.The density of the ceramics were measured with Archimedes theory,the ceramic phase structure was studied by XRD,the dielectric and pyroelectric properties of Al-doped Ba_(0.采用传统陶瓷固相烧结工艺,制备了Al掺杂Ba_(0。
3.The density of the ceramics were measured with Archimedes theory,the ceramic phase structure was studied by XRD,the dielectric and pyroelectric properties of Al-doped Ba0.采用传统陶瓷固相烧结工艺,制备了Al掺杂Ba0。
英文短句/例句
1.Luminescence Properties of ZnO and V/ Al-doped ZnO Thin Films;ZnO及V、Al掺杂ZnO薄膜的发光性能研究
2.Study on the Preparation and Optical and Electrical Properties of Al-doped ZnO Thin Films;Al掺杂ZnO薄膜的制备与光电性质研究
3.Electrical Transport Properties of Al Doped ZnO Thin FilmsAl掺杂的ZnO薄膜的电输运性质
4.Influence of Al doping on the dielectric properties of CaCu_3Ti_4O_(12) ceramicsAl掺杂对CaCu_3Ti_4O_(12)陶瓷介电性能的影响
5.Study on Controlled Al-doped Single-crystalline Si_3N_4 Nanobelts单晶Si_3N_4纳米带可控Al掺杂研究
6.The Buffer Layer of Al-doped 4H-SiCAl掺杂4H-SiC同质外延的缓冲层
7.The investigation on Cd_(0.9)Zn_(0.1)Te crystal doped with AlCd_(0.9)Zn_(0.1)Te晶体的Al掺杂研究
8.Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel ProcessAl掺杂ZnO薄膜的表面形貌和光学性质
9.Synthesis and Conducting Properties of Al-doped La_(10)(SiO_4)_6O_3Al掺杂La_(10)(SiO_4)_6O_3的制备及其导电性能
10.Preparation of Al-Doped ZnO Films by Sol-Gel Method and Study of Their Properties;溶胶—凝胶法制备Al掺杂ZnO（AZO）薄膜及其性能研究
11.Preparation and characterization of ion exchange derived Co,Cr and Al doped LiMnO_2Co、Cr、Al掺杂LiMnO_2的离子交换法制备及其性质研究
12.Preparation and Infrared Character Study of Al-Doped ZnO Thin FilmAl掺杂ZnO薄膜的制备及红外光学性能的研究
13.The influence of different Al concentration doped ZnO thin film on structural and optical properties不同Al掺杂对ZnO薄膜结构及光学性质的影响
14.Research on annealing process and properties of Al-doped ZnO filmsAl掺杂ZnO薄膜的热处理工艺与性能研究
15.Influence of Al Doping on the Properties of BST Pyroelectric CeramicsAl掺杂对钛酸锶钡热释电陶瓷性能的影响
16.Study on the Strengthening Mechanism of Molybdenum Wire Doped with Si、Al、K;Si、Al、K掺杂钼丝强化机理研究
17.Preparation of Mg and Al co-doped ZnO thin films with tunable band gap带隙可调的Al,Mg掺杂ZnO薄膜的制备
18.ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF ZnO DOPED WITH Al OR NiAl,Ni掺杂ZnO的电子结构与光学性质
相关短句/例句
Al dopingAl掺杂
1.Mg1-xAlxB2 models for different Al doping have been presented and optimized.建立了不同Al掺杂浓度的Mg1-xAlxB2模型并进行几何优化,讨论了掺杂对系统几何构型、能带结构、电子态密度、键布居和超导转变温度的影响。
3)Al dopedAl掺杂
1.Pure and Al doped Я-Fe2O3 materials were prepared by a solution phase controlled hydrolysis me-thod, and were characterized by XRD, SEM and ICP techniques.采用均相沉淀法制备了纯α-Fe2O3(300℃煅烧)和Al掺杂α-Fe2O3(300和400℃煅烧),使用SEM,XRD,ICP和红外光谱等手段进行表征,并利用气敏仪测试无水乙醇和90#汽油在不同条件下对材料的响应性能。
4)Al-doped掺杂Al
1.Research progress in the Al-doped cathode materials for Li-ion batteries;锂离子电池正极材料掺杂Al的研究进展
5)Al-N codpingAl-共掺杂
6)Al doped GaNAl掺杂GaN
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
