1)InN[英][?n][美][?n]氮化铟
1.First-principles study of the p-type doped InN;氮化铟p型掺杂的第一性原理研究
2.LATTICE VIBRATIONAL PROPERTIES OF SEMICONDUCTOR InN;半导体氮化铟(InN)的晶格振动
3.Preparation and Characterization of InN Nanowires and Nano-tubes;氮化铟纳米线和纳米管的制备与表征
英文短句/例句
1.Preparation and Characterization of InN Nanowires and Nano-tubes;氮化铟纳米线和纳米管的制备与表征
2.Study of the Nonlinear Optical Properties in ZnTe and InN Semiconductors;半导体碲化锌及氮化铟非线性光学特性研究
3.Study on the Electrotransport Properties of Novel Semiconductor Indium Nitride Thin Films;新型半导体氮化铟薄膜的电学输运特性
4.Nonlinear Optical and Photoluminescence Study of Indium Nutride Thin Films;半导体氮化铟薄膜非线性光学及发光特性研究
5.Controllable Preparation and Characterization of One-Dimensional Nano/Microstructures of Indium Nitride;氮化铟一维纳/微米结构的可控制备和表征
6.Studies on Enantioselective Allylation of Ketones Catalyzed by a Novel Chiral N,N'-Dioxide Indium (Ⅲ) Complexes;新型手性双氮氧铟络合物催化酮的不对称烯丙基化反应研究
7.Research on the Structural and Electronic Properties of Ga_n、Ga_nN、In_n Clusters;镓(Ga_n)、氮化镓(Ga_nN)及铟(In_n)团簇的结构和电子性质研究
8.Synthesis and Control of Indium Oxide and Indium Phosphide Nanoscale Building Blocks;氧化铟和磷化铟纳米结构单元的合成与控制
9.Research on the Process for Extracting Indium from Zinc Oxide Flue Dust by Pressure Oxidation Leaching含铟锌渣氧粉加压氧化浸铟的工艺研究
10.Superbright InGaN single-quantum-well blue LED超高亮度蓝色铟镓氮单量子阱发光二极管
11.A Study of Mechanical Activation Enhancing Indium Leaching from Antimony Oxide and Separation between Antimony and Indium;机械活化强化锑渣氧粉浸铟以及锑铟分离的工艺研究
12.Research on Preparation of CuInS_2 and In_2S_3 Thin Films for Solar Cells by Wet Chemical Method;湿化学法制备太阳电池用硫铟铜及硫化铟薄膜的研究
13.Solution-Phase Synthesis of Nanostructured In_2O_3 and In_2S_3 and Their Properties Research氧化铟、硫化铟纳米结构材料的液相合成及性质研究
14.optically optimal indium antimonid infrared detector光优型锑化铟红外探测器
15.age to indium resonance慢化到铟共振能量的中子龄
16.indium-antimonide submillimeter photoconductive detector锑化铟亚毫米波光电导探测器
17." Indium antimonide polycrystal, single crystals and as-cut slices"GB/T11072-1989锑化铟多晶、单晶及切割片
18.NNUMERICAL ANALYSIS OF THERMAL AND FLOW FIELD IN THE GROWTH OF SINGLE-CRYSTAL INP磷化铟单晶生长中的传热和流动分析
相关短句/例句
indium nitride thin film氮化铟薄膜
3)indium nitride single crystal氮化铟单晶
4)InGaN/GaN氮镓铟/氮化镓
1.Investigation on Optical Properties of Different Width InGaN/GaN Quantum Well;不同厚度氮镓铟/氮化镓量子阱的光学特性研究
5)Hydrogenated indium nitride cluster氮化铟氢化物
6)InSb-In锑化铟-铟
1.A kind of InSb-In eutectic film based magnet sensitive resistance is adopted for replacing the Hall sensing element in automotive electronic ignition system.根据汽车点火系统的要求,综合考虑价格因素及实际的安装结构,设计了一种用锑化铟-铟共晶体磁敏电阻代替霍耳元件的电子点火系统,该系统不改变原系统的机械结构,仅在原分电器的基础上做微小的改动,因此其安装简便,且价格便宜,可以投入实施。
2.A relatively omnidirectional vibration sensor made of InSb-In eutectic film magnetoresistance is introduced.本文最新研制了一种用锑化铟-铟(InSb-In)共晶体薄膜磁阻制成的准全方位振动传感器。
延伸阅读
氮化铟单晶分子式:CAS号:性质:InN 周期系第III,V族化合物半导体。六方晶系铅锌矿型结构,晶格常数0.3533nm。密度6.88g/cm3。熔点1200℃。导带极小值与价带极大值位于布里渊区中心,为直接带隙半导体,室温禁带宽度1.95eV。电阻率4×10-5Ω·m。620℃真空下易分解。