锗硅,SiGe英语短句,例句大全

锗硅,SiGe
1)SiGe锗硅
1.Electrical characteristics and selective growth of SiGe by ultrahigh vacuum chemical vapor deposition;超高真空CVD选择性外延锗硅及其电学特性
2.Design and simulation of high Ge content PIN SiGe photo-detector;高锗组分PIN锗硅光电探测器设计与模拟
3.Research on Material Growth of Long Wavelength SiGe Photodectors;长波长锗硅光电探测器的材料生长研究

英文短句/例句

1.Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
2.The Study of Growth of SiGe Thin Films and Electrical Properties by UHVCVD;UHVCVD生长锗硅薄膜及其电学性能研究
3.40-Gb/s Demultiplexer Based on SiGe Process基于锗硅工艺的40-Gb/s分接器
4.Research on Relaxation of SiGe/SOI and Fabrication of SSOI Materials;SOI基锗硅弛豫研究及绝缘体上应变硅材料制备
5.The Mechanism of No Phonon Optical Transitions in SiGe Alloy锗硅合金半导体中无声子参与光跃迁机制研究
6.Research in Growth of Poly-Si_(1-x)Ge_x on SiO_2 by UHVCVD;利用UHV/CVD在SiO_2薄膜上生长多晶锗硅薄膜的研究
7.Solar cell industry and application of silicon germanium thin film;太阳能电池产业与半导体锗硅薄膜的应用综述
8.Study of the Low-dimensional Structures on the SiGe Alloys and the Photoluminescence;硅锗薄膜上低维结构及PL光谱研究
9.Study of Si-based Ge PIN Infrared Detector with Numerical Simulation硅基锗PIN红外探测器的数值模拟研究
10.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
11.Test method for resistivity of silicon and germanium bars using a two-point probeGB/T1551-1995硅、锗单晶电阻率测定直流两探针法
12.Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe arrayGB/T1552-1995硅、锗单晶电阻率测定直排四探针法
13."Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."常用的本质半导体是硅、锗以及砷化镓等的单晶。
14.The Study of Photics Character and Thermoelectrical Properties of Silicon-Germanium Alloys;硅锗合金光学性质及热电转换性能的研究
15.Study and Improvement of Silicon Based Germanium Quantum-dot Near Infrared Photodetecter;硅基锗量子点近红外探测器的研究和改进
16.Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;掺锗直拉硅中的杂质缺陷及其光伏应用研究
17.A Theoretical Study of Structure and Aromaticity of CSiGe Tetramer Clusters;碳硅锗四原子团簇结构和芳香性的理论研究
18.The Molecular Simulation for Evolution of the Partial Dislocation in Sige Heterostructures硅锗异质结构中部分位错演化的分子模拟

相关短句/例句

GeSi锗硅
1.GeSi quantum dots studied by grazing incidence small angle X-ray scattering;锗硅量子点掠入射小角X射线散射研究
3)Ge/Si锗/硅
1.Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories;锗/硅异质纳米结构中空穴存储特性研究
2.p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array;p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列
3.The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
4)SiGe硅锗
1.Great interest has been devoted to one-dimensional SiGe nanoscale materials including SiGe nanowire heterostructures and nanotubes for the preparation of nanoscale devices owing to the excellent electrical and optical properties and the good compatibility with the present sillcon-based micro-electronics industry.一维硅锗纳米复合材料,主要包括硅锗纳米线异质结与纳米管,具有优异的电学、光学等性能,易与现代以硅为基础的微电子工业相兼容,所以在纳米器件等领域得到了广泛重视。
5)Si 1-xGe x锗-硅
6)Silicon/germanium硅/锗