1)δ-dopingδ掺杂
1.The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.用X射线衍射方法通过不同晶面的ω扫描测试,分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。
英文短句/例句
1.Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells量子限制效应对δ掺杂GaAs/AlAs多量子阱中铍受主态寿命的影响
2.Preparation and Properties Study of Doped Ca_3Co_4O_(9+δ);掺杂Ca_3Co_4O_（9+δ）材料制备及热电性能研究
3.Low Frequency Internal Friction Research on Doped La_2MO_(4+δ)(M=Cu, Ni) SystemLa_2MO_（4+δ）（M=Cu，Ni）掺杂体系低频内耗研究
4.X-ray Diffraction Studies on Eu Doped YBa_(2-x)Eu_xCu_3O_(7-δ) Superconductors;Eu掺杂YBa_(2-x)Eu_xCu_3O_(7-δ)超导体的X射线衍射研究
5.A substance that adulterates.掺杂物掺有杂质的物质
6.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
7.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
8.buried collector dopant隐埋集电极用掺杂剂
9.modulation-doped field effect transistor调制掺杂场效晶体管
10.Her tears mingled with her laughter.她的笑里掺杂着泪水。
11.it is necessary to remove the adulterants before use.使用前不必去除掺杂物。
12.the adulterating effect of extraneous materials.其他物质掺杂的结果。
13.a blur of fact and fancy.真实和幻想掺杂不清.
14.doped-silica graded fiber掺杂石英渐变型光纤
15.Atomsitic Simulation of Doped LaMnO_3 and La_2CuO_4;掺杂LaMnO_3和La_2CuO_4的原子模拟
16.Study of the Doped LaMnO_3 System NTC Material;掺杂LaMnO_3系NTC材料的研究
17.Study on the Property of PTCR Doped with TiCN;掺杂TiCN的PTCR性能的研究
18.Effects of SrCO_3 on Electrical Properties of La_2Ti_2O_7 CeramicSrCO_3掺杂La_2Ti_2O_7陶瓷的电性能
相关短句/例句
δ-dopedδ掺杂
1.Our results for Si δ-doped GaAs indicate that all the Si peaks of SIMS depth profile show asymmetric broadening and surface segregation increases with growth temperature,however,which are not influencing the diffusion of Si atoms.利用二次离子质谱（SIMS）和电化学剖面C－V方法研究了生长温度对GaAs中理想Siδ掺杂结构的偏离和掺杂原子电激活效率的影响。
2.We report photoluminescence studies of internal transitions of shallow Be acceptors in bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum w ell samples with well width ranging from 3 to 20nm.报道了掺杂在GaAs体材料中和δ掺杂在一系列GaAs/AlAs多量子阱中的Be受主带间跃迁的光致发光。
3)doped LaCoO3-δ掺杂LaCoO3-δ
4)carbon δ-doping碳δ掺杂
5)Zinc δ doping锌δ掺杂
6)δ-doping RITDδ掺杂RITD
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
