Ge2Sb2Te5,Ge_2Sb_2Te_5英语短句,例句大全

Ge2Sb2Te5,Ge_2Sb_2Te_5
1)Ge_2Sb_2Te_5Ge2Sb2Te5
1.The erasing properties of amorphous Ge_2Sb_2Te_5 phase change films are studied by using blue-green laser.利用蓝绿激光对非晶态Ge2Sb2Te5相变薄膜进行擦除性能的研究,分别用1000ns, 500ns,100ns, 60ns脉宽的蓝绿激光进行实验。
2.Nitrogen-doped Ge_2Sb_2Te_5 (N-GST) film for phase change memory was prepared by reactive sputtering.通过反应溅射的方法,制备了N掺杂的Ge2Sb2Te5(NGST)薄膜,用作相变存储器的存储介质。
2)Ge2Sb2Te5 filmGe2Sb2Te5薄膜
1.Using a radio-frequency reactive magnetron sputtering method,Ge2Sb2Te5 films were grown on quartz substrates at room temperature.不同脉冲宽度的激光对非晶态薄膜的烧蚀结果显示:激光的能量密度对薄膜的记录效果有显著影响,在5mW、50ns的脉冲激光作用下,Ge2Sb2Te5薄膜具有最好的光存储效果。
3)amorphous Ge_2Sb_2Te_5 filmGe2Sb2Te5非晶薄膜
1.Ultrafast dynamics and its excitation-energy-density dependence of photoexcited carriers in amorphous Ge_2Sb_2Te_5 film were studied at room temperature by femtosecond-time-resolved pump-probe reflectivity spectroscopy.利用飞秒时间分辨抽运-探测反射光谱技术研究了室温下Ge2Sb2Te5非晶薄膜中载流子超快动力学及其激发能量密度依赖性。
4)Germanium[英][d??:'meini?m][美][d??'meni?m]Ge
1.The Determination of Germanium and Impurities in Organic Germanium (Ge-132) by AAS;原子吸收光谱法测定有机锗（Ge─132）中的锗及其杂质
2.Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out.报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究。
3.Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。

英文短句/例句

1.Epitaxy of Strain-relaxed SiGe, Ge Films and Fabrication of Ge Photodetectors on Si SubstratesSi基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
2.High Purity ZnS/Ge Interference Filter Emittance高纯度ZnS/Ge干涉滤波的发射器
3.Studies on ZnSe/GaAs/Ge High-Efficiency Solar Cells;ZnSe/GaAs/Ge高效太阳电池的研究
4.Zero-dimensional Ge and One-dimensional ZnO Nanostructures and Devices;零维Ge和一维ZnO纳米结构与器件
5.Study of Nanocrystalline Ge Preparation and Neutron Transmutation Doping;Ge纳米晶制备及中子嬗变掺杂的研究
6.Study on Growth of Two-terminal Monolithic GaInP_2/GaAs/Ge Tandem Solar Cell by MOCVD;GaInP_2/GaAs/Ge级联太阳电池的MOCVD生长研究
7.Magnetocaloric Effect of Fe_2P-type (Mn, Fe)_2(P, Ge) Compounds;Fe_2P型（Mn，Fe）_2（P，Ge）化合物的磁热效应
8.Dynamics Simulation of Nanosecond Pulsed Laser Ablation of Ge Crystal;脉冲激光烧蚀晶体Ge的动力学模拟
9.Investigation on the Stress and Strain Distribution of Ge/Si Semiconductor Self-Organized Quantum Dots;Ge/Si半导体量子点应力应变分布研究
10.The Isothermal Section of Gd-Fe-Ge Ternary System at 773K;Gd-Fe-Ge三元系合金相图773K等温截面
11.Synthesis and Characterization of ZnSe/Ge Nanowires HeterostructuresZnSe/Ge异质结纳米线的制备和表征
12.A study of RHEED pattern from the epitaxial growth of Si-Ge crystal在Si-Ge晶体外延生长中的RHEED花样研究
13.Upgrading and Transformation of GE PACS/RIS systemGE PACS/RIS的升级改造
14.Complex fault in GE ProSpeed AI CT:case reportGE ProSpeed AI CT复杂故障1例
15.Two Cases of Troubleshooting of GE HT600 X-ray MachineGE HT600 X光机维修二例
16.ATUOMATIC CONTROL SYSTEM OF TMEIC-GE FLYING SHEARTMEIC-GE飞剪自动控制系统
17.The three cases of faults maintenance about GE Prospeed AIGE Prospeed AI故障维修3例
18.Research on Competitive Strategy of GE Security in China;GE安防事业部中国市场竞争战略研究

相关短句/例句

Ge2Sb2Te5 filmGe2Sb2Te5薄膜
1.Using a radio-frequency reactive magnetron sputtering method,Ge2Sb2Te5 films were grown on quartz substrates at room temperature.不同脉冲宽度的激光对非晶态薄膜的烧蚀结果显示:激光的能量密度对薄膜的记录效果有显著影响,在5mW、50ns的脉冲激光作用下,Ge2Sb2Te5薄膜具有最好的光存储效果。
3)amorphous Ge_2Sb_2Te_5 filmGe2Sb2Te5非晶薄膜
1.Ultrafast dynamics and its excitation-energy-density dependence of photoexcited carriers in amorphous Ge_2Sb_2Te_5 film were studied at room temperature by femtosecond-time-resolved pump-probe reflectivity spectroscopy.利用飞秒时间分辨抽运-探测反射光谱技术研究了室温下Ge2Sb2Te5非晶薄膜中载流子超快动力学及其激发能量密度依赖性。
4)Germanium[英][d??:'meini?m][美][d??'meni?m]Ge
1.The Determination of Germanium and Impurities in Organic Germanium (Ge-132) by AAS;原子吸收光谱法测定有机锗（Ge─132）中的锗及其杂质
2.Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out.报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究。
3.Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。
5)GeoMLGe-oML
6)Ge implantation注Ge