1)solid source molecular beam epitaxy固源分子束外延
1.Single crystalline 3C-SiC thin films were grown on Si(111)at different substrate temper- atures by solid source molecular beam epitaxy(SSMBE).利用固源分子束外延(SSMBE)技术,在Si(111)衬底上异质外延生长3C-SiC单晶薄膜,通过RHEED、XRD、AFM、XPS等实验方法研究了衬底温度对薄膜结构、形貌和化学组分的影响。
2)SSMBE固源分子束外延
1.Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.利用固源分子束外延(SSMBE)生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征。
3)SSMBE固态源分子束外延
4)solid source molecular beam epitaxy (SSMBE)全固源分子束外延
5)GSMBE气源分子束外延
1.Controlling states and activities of the doping gases at a specified temperature,an in situ doping control technique of SiGe/Si materials by GSMBE with knowledge property right of our own is proposed.在特定温控下对掺杂气体分子的状态和活性进行控制 ,建立了一套具有自主知识产权的气源分子束外延工艺生长 Si Ge/Si材料的原位掺杂控制技术。
6)GSMBE气态源分子束外延
1.1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE;气态源分子束外延1.3μm VCSEL器件结构
2.GSMBE Growth and Characterization of Fundamental and QCL Materials;气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
3.Pseudomorphic Si 1-x Ge x layers are grown in GSMBE system using gas source disilane and elemental germanium.采用气态源分子束外延（ＧＳＭＢＥ）法成功地生长出应变ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金，所使用的源分别是乙硅烷和固态锗。
英文短句/例句
1.GSMBE Growth and Characterization of Fundamental and QCL Materials;气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
2.Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;分子束外延生长AIN薄膜的初步研究
3.Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE射频分子束外延生长AlInGaN四元合金
4.MBE Growth of InP Based PHEMT Epitaxial Materials;分子束外延生长InP基赝配高电子迁移率晶体管外延材料
5.The InSb Epitaxial Growth on GaAs Substrate by Molecular Beam Epitaxy and Its Structure and Properties;GaAs基InSb薄膜的分子束外延生长及其结构与性能
6.Effect of Reconstructures on Molecular Beam Epitaxial Growth of GaAs;表面再构对GaAs分子束外延薄膜生长的影响
7.Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film分子束外延Gd_2O_3、Nd_2O_3高介电纳米薄膜的结构研究
8.Magnetic and electrical properties of Fe_3O_4 thin films on MgO(100) substrates by laser molecular beam epitaxyFe_3O_4/MgO(100)薄膜的激光分子束外延与磁电学性能
9.The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer分子束外延HgCdTe薄膜的CdTe缓冲层特性研究
10.FABRICATION AND CRYSTALLINITY OF Bi_2Sr_2CaCu_2O_(8+δ)THIN FILMS BY MOLECULAR BEAM EPITAXYBi_2Sr_2CaCu_2O_(8+δ)薄膜的分子束外延法制备及结晶性
11.A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe分子束外延生长Hg1-_xCd_xTe材料原位退火研究
12.MBE GROWN ANTIMONIDE MID-INFRARED LASERS AND PHOTODETECTORS用分子束外延制备红外锑化物激光器和探测器材料
13.Epitaxial and Physical Properties of ZnO-based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy;ZnO基稀磁半导体单晶薄膜的分子束外延生长以及性能研究
14.Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In_(0.2)Ga_(0.8)As衬底温度和生长速率对In_(0.2)Ga_(0.8)As分子束外延薄膜生长影响
15.Analysis of offspring of wheat transferred with exogenous DNA by ion beam离子束介导外源DNA导入小麦后代变异系有关分析
16.The Biological Effect of Generation by Exogenous DNA Transformation via Ion Beam Treatment in Wheat离子束介导外源DNA转化小麦的当代生物效应分析
17.Development of Liquid Metal Ion Source for Nanometer Focused Ion Beam System;纳米聚焦离子束系统液态金属离子源的研制
18.Weakly Bound Triatomic He_2K and He_2Rb Molecules;三原子分子He_2K和He_2Rb的弱束缚态研究
相关短句/例句
SSMBE固源分子束外延
1.Quantum well structure film of 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate.利用固源分子束外延(SSMBE)生长技术,在1350K的衬底温度下,通过改变Si束流强度,在6H-SiC(0001)面上外延生长6H-SiC/3C-SiC/6H-SiC量子阱结构薄膜,并用反射高能电子衍射(RHEED)与光致发光(PL)谱对生长的薄膜的晶型和发光特性进行表征。
3)SSMBE固态源分子束外延
4)solid source molecular beam epitaxy (SSMBE)全固源分子束外延
5)GSMBE气源分子束外延
1.Controlling states and activities of the doping gases at a specified temperature,an in situ doping control technique of SiGe/Si materials by GSMBE with knowledge property right of our own is proposed.在特定温控下对掺杂气体分子的状态和活性进行控制 ,建立了一套具有自主知识产权的气源分子束外延工艺生长 Si Ge/Si材料的原位掺杂控制技术。
6)GSMBE气态源分子束外延
1.1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE;气态源分子束外延1.3μm VCSEL器件结构
2.GSMBE Growth and Characterization of Fundamental and QCL Materials;气态源分子束外延材料生长及特性和量子级联激光器材料生长研究
3.Pseudomorphic Si 1-x Ge x layers are grown in GSMBE system using gas source disilane and elemental germanium.采用气态源分子束外延（ＧＳＭＢＥ）法成功地生长出应变ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金，所使用的源分别是乙硅烷和固态锗。
延伸阅读
双生长室固态源分子束外延设备双生长室固态源分子束外延设备 双生长室固态源分子束外延设备
