Ga2O3/ITO/Ga2O3 filmsGa2O3/ITO/Ga2O3膜
1.Ga2O3 films and Ga2O3/ITO/Ga2O3 films were prepared by alternate RF magnetron sputtering of Ga2O3target and DC magnetron sputtering of ITO(indium tin oxide)target.用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO(锡铟氧化物)靶材分别制备了Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜,用紫外-可见分光光度计、四探针测试仪对Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜的光学透过率和电阻率进行了表征。
3)Ga2O3/Al filmsGa2O3/Al膜
1.Ga2O3/Al films were deposited on the Si(111) substrates by magnetron sputtering and we got many kinds of GaN nanostructures by annealing the Ga2O3/Al films at different temperature.采用磁控溅射的方法在Si(111)衬底上溅射沉积了Ga2O3/Al膜,并通过氨化的方法在Si(111)衬底上获得了GaN纳米结构材料,研究了不同的氨化温度对生成GaN纳米结构材料的影响。
4)β-Ga_2O_3 single crystalβ-Ga2O3单晶
1.β-Ga_2O_3 single crystals,the wide band gap semiconductor,were grown using floating zone technique.-βGa2O3单晶的荧光谱不仅观察到了3个特征峰:紫外光(395nm)、蓝光(471nm)、绿光(559nm),还观察到了在277和297nm的紫外光和692nm的红光荧光发射。
5)ZnO-Ga 2O 3/HZSM-5ZnO-Ga2O3/HZSM-5
6)Ga_2O_3Ga2O3薄膜
1.Gallium nitride thin films have been successfully grown on the Ga-diffused Si (111) substrates through nitriding Ga_2O_3 thin films deposited by rf magnetron sputtering and the growth condition was investigated.采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜,再氮化反应组装GaN晶体膜,并对其生长条件进行了研究。
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(赫立登) Acide Rde GA (阿克纳)分子式：C18H13N3Na2O8S2分子量：509.430CAS号：3734-67-6性质：红色粉末，溶于水为大红色溶液，微溶于酒精和溶纤素，不溶于其他有机溶剂。遇浓硫酸呈蓝光红色，将其稀释后呈较黄的红色；遇浓硝酸呈桔红色溶液，后转橙色；遇浓盐酸生成红色沉淀，稀释后即溶解。其水溶液加浓盐酸呈红色；加氢氧化钠液呈桔棕色。染色时遇铜离子使色泽带蓝光而暗；遇铁离子色泽带蓝光而浅。匀染性好。制备方法：苯胺重氮化后，与乙酰H酸偶合，盐析而得。H酸(100%) 400 硫酸(100%) 172苯胺(99%) 114 元明粉 273乙酐 180 精盐 2000亚硝酸钠(98%) 90 碳酸钠 550盐酸(31%) 163用途：主要用于羊毛织物的染色。拼混性强，适宜于染浅，中色，可以直接在毛织物、锦纶和蚕丝织物上印花。还可以用来制造色淀以及化妆品、纸张、肥皂、和木材等的着色制造墨水用。其钡盐可作用有机颜料，还用于塑料和医药。
