1)In2O3In_2O_3
1.Study on the Gas Sensing Property of SnO2In2O3Fe2O;SnO_2-In_2O_3-Fe_2O_3气敏特性研究
2.Study on the Gas Sensing Property of Doping In2O3;掺杂In_2O_3气敏特性研究
英文短句/例句
1.Study on Preparation and Characterization and Surface Modification of In_2O_3/SnO_2 Nanopowders;In_2O_3/SnO_2纳米粉制备表征与表面修饰研究
2.Preparation and Properties of Transparent Conductive Film Based on In_2O_3;In_2O_3基透明导电薄膜的制备及特性研究
3.Fe-doped In_2O_3 Room Temperature Ferromagnetic Semiconductor;Fe掺杂In_2O_3室温磁性半导体
4.MICROSTRUCTURE AND MAGNETIC PROPERTIES OF Fe_X(In_2O_3)_(1-X ) MAGNETIC GRANULAR FILMS;Fe_X(In_2O_3)_(1-X)磁性颗粒膜的结构与磁性
5.Optical Properties of In_2O_3 NanostructuresIn_2O_3纳米材料的发光特性研究
6.Synthesis and Characterization of Indium Oxide Nanopowder纳米In_2O_3的微乳液法合成及表征
7.The Preparation of the Gas Sensing Material Nanometer In_2O_3 by the Method of Microemulsion and the Study of Its Phase Behavior;微乳液法制备纳米In_2O_3及体系的相行为研究
8.Preparation and Properties Study of Transparent Conductive In_2O_3:Sn and ZnO:Al Thin Films;透明导电In_2O_3:Sn和ZnO:Al薄膜的制备及其特性研究
9.Study on Chlorine Sensitivity of Semiconductor Composite Oxide in Series of Indium Oxide;In_2O_3系半导体复合氧化物氯气敏感特性的研究
10.Synthesis, Characterization and Photoluminescence Studies of In_2O_3 Nanomaterials;In_2O_3纳米材料的制备和表征及发光特性研究
11.Studies on Morphology and Structure Control of In_2O_3 and Gas Sensing Properties;不同形貌纳米In_2O_3的可控制备及气敏性能研究
12.Electrochemical behavior of ultraviolet-visible spectrum at the In_2O_3-SnO_2 electrode;在In_2O_3-SnO_2电极上的紫外-可见光谱电化学行为
13.MICROSTRUCTURE AND OPTICAL PROPERTIES OF Fe_x(In_2O_3)_(1-x) MAGNETIC GRANULAR FILMS;Fe_x(In_2O_3)_(1-x)磁性颗粒膜的微结构及光学性质
14.Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations宽禁带半导体In_2O_3结构和性能的第一性原理研究
15.One Step Synthesis of Gas Sensor Material Nanosized In_2O_3 by Surfactant-hydrothermal Method表面活性剂-水热法一步制备纳米In_2O_3气敏材料
16.Preparation of In_2O_3 Nanoporous Materials and Its Applications for HCHO SensorIn_2O_3纳米孔材料的制备及其甲醛气敏性能研究
17.Reseach on SAW CO Gas Sensor Based on PAN/In_2O_3 Selective Layer基于聚苯胺/In_2O_3的声表面波CO气体传感器研究
18.Preparation of Tm~(3+) Doped In_2O_3 Nanopowders and Its Gas Sensitive PropertyTm~(3+)掺杂纳米In_2O_3的制备及其气敏性能研究
相关短句/例句
indium tin oxide powderIn_2O_3(SnO_2)
3)In_2O_3 filmsIn_2O_3膜
4)In_2O_3 nanowireIn_2O_3纳米线
5)In 2O 3 doped with SnSn掺杂In_2O_3
6)In_2O_3 thin filmsIn_2O_3薄膜
延伸阅读
silver-SnO2-WO3 materials分子式:CAS号:性质:银基添加氧化锡和氧化钨的电接触材料。氧化钨(或氧化钼)可改善氧化锡的浸润性,减少接点过热。使用寿命大幅度提高。采用烧结挤压法制造。中等负荷电接触材料,用在各种接触器、电机起动器、低功率断路器等电器中。Ag-11.5SNO2-0.5WO3和Ag-11.2SnO2-0.8MoO3可在很多应用领域代替AgCdO。