1)P-dopingP掺杂
1.The effect of P-doping on the structure,morphology and luminescent properties of BaMgAl_10O_17:Mn2+ were determined by X-ray diffraction,scanning electron microscopy,Fourier-transform infrared spectroscopy,energy dispersive X-ray spectroscopy and vacuum ultraviolet(VUV)spectra.采用高温固相法合成P掺杂的BaMgAl10O17:Mn2+荧光粉,其中P通过(NH4)2HPO4引入。
英文短句/例句
1.The influence of Ⅴ/Ⅲ ratio to doping in P-GaP and Red LEDⅤ/Ⅲ对P型GaP掺杂及红光LED量子效率的影响
2.Effect of phosphor-doping on optical properties of BaMgAl_(10)O_(17):Mn~(2+)P掺杂对绿色荧光粉BaMgAl_(10)O_(17):Mn~(2+)性能的影响
3.Investigation on Preperation of In-N Co-doping p-ZnO Thin Films and ZnO Relative Doping with Other Elements;In-N共掺杂制备p-ZnO薄膜及ZnO其它相关掺杂研究
4.Electronic and magnetic properties of p,n type dopant and Mn co-doped GaNp,n型掺杂剂与Mn共掺杂GaN的电磁性质
5.Preparation of P-type ZnO Thin Films and Study on the Doping Mechanisms;p型ZnO薄膜的制备及掺杂机理研究
6.Study on p-type Doping and Correlation Problems of ZnO Films;ZnO薄膜p型掺杂及其相关问题研究
7.Delta-Doping and Surface Roughness Technique of P-GaN;P型GaN的Delta掺杂及表面粗化研究
8.Study on the Mechanism and Method of P-type Doping in GaN;GaN材料P型掺杂机理及方法的研究
9.Preparations and Characteration of single phosphorus-doped p-type ZnO nanowireCVD法制备单根磷掺杂P型ZnO纳米线
10.Mechanism of P-type ZnO by Li-N Co-dopingLi、N共掺杂实现P型ZnO的机理探讨
11.RECENT PROGRESS ON PREPARATION AND P-TYPE DOPING OF ZnO FILMSZnO薄膜的制备及p型掺杂研究进展
12.Doping mechanism and preparing technology of p-type ZnO氧化锌薄膜的p型掺杂及其制备方法
13.P-type Doping and Analysis of ZnO Thin Films by L-MBE Dissertation for Doctoral Degree;L-MBE法生长ZnO薄膜的p型掺杂及分析表征
14.The Preparation and the Investigation of Electrical and Optical Properties of Nitrogen-doped p-type ZnO;氮掺杂p型ZnO薄膜材料的制备及光电性质研究
15.The Research on the Effect of Rare Earth Nd、Ce on Fe-P Alloy by Chemical Plating;稀土Nd、Ce掺杂对化学镀Fe-P合金影响的研究
16.Preparation and Properties of p-type ZnO:Li by PLD;PLD法生长锂掺杂p型ZnO薄膜及其性质研究
17.Na-doped p-type ZnO Thin Films Prepared by DC Reactive Magnetron Sputtering;直流反应磁控溅射法制备Na掺杂p型ZnO薄膜
18.Investigation on P- and Sb-doped p-type ZnO Thin Films;磷和锑掺杂p型ZnO薄膜制备及性能研究
相关短句/例句
p-dopingp型掺杂
1.This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL .使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。
2.This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present.本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。
3.In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。
3)p-type dopingP型掺杂
1.Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。
2.ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices.ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。
3.In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved.为了开发ZnO短波长光电器件,首要解决的 关键问题是氧化锌的p型掺杂。
4)p-ZnO dopingp-ZnO掺杂
5)high p-dopingp型高掺杂
6)p-type codopingp型共掺杂
延伸阅读
[styrene-(2-vinylpyridine)copolymer]分子式：分子量：CAS号：性质：学名苯乙烯-2-乙烯吡啶共聚物。微黄色粉末或透明小颗粒晶体。无臭，无味。不溶于水，溶于酸、乙醇、丙酮、氯仿。有抗水、防潮性能，适用于多种药片的包衣等。
