1)F-dopantF掺杂
1.Study on the mechanism of influence on LiMn_2O_4 by F-dopant;F掺杂影响LiMn_2O_4性能的机理研究
英文短句/例句
1.First-Principles Research on N/F-Doped and N-F-Codoped TiO_2(101) SurfacesN/F掺杂及N-F共掺杂TiO_2(101)表面特性的第一性原理研究
2.Study on the Preparation and Fluoride Doping of NaCo_2O_4 Thermoelectric Materials;NaCo_2O_4热电材料的制备及F掺杂研究
3.Synthesis of Fluorine-Doped Tin Oxide Nanoparticles by Combustion MethodF掺杂SnO_2纳米粉体的燃烧合成
4.RESEARCH ON THERMAL AND MAGNETIC CHARACTERISTIC OF FLUORINED YBa_2Fe_3O_8F掺杂的YBa_2Fe_3O_8热性质和磁性质研究
5.Mg/F Doped Lithium Magnate Spinels Cathode for Lithium-ion Batteries;Mg/F掺杂锂锰氧尖晶石锂离子电池正极材料
6.Effect of CHF_3/DMCPS ratio on structure and properties of F doping SiCOH low-k films deposited by ECR plasmaCHF_3/DMCPS比对F掺杂SiCOH薄膜结构及性能的影响(英文)
7.Investigation on Low-κ SiCOH Films Prepared by ECR-CVD and the Influence of Fluorine Incorporation;SiCOH低κ薄膜的ECR等离子体制备及F掺杂效应研究
8.Photoelectrocatalytic Oxidation Decolourization of Allura Red Using N, F-doped TiO_2 Film Electrode under Visible-lightN、F掺杂的TiO_2膜电极在可见光条件下光电催化氧化诱惑红脱色效果的研究
9.Synthesis and electrochemical performances of fluorine doped lithium vanadium oxidesF-掺杂锂钒氧化物的合成及其电化学性能
10.Effect of F~-,Fe~(3+)-doping on Performance of Lead Dioxide AnodesF~-和Fe~(3+)掺杂对Ti基PbO_2阳极性能的影响
11.Preparation of Al-F Co-Doped ZnO Thin Films by Sol-Gel Method and Study of Their Properties;溶胶—凝胶法制备Al-F共掺杂的ZnO薄膜及其性能研究
12.Effects of Doping Elements Lanthanum and Fluorine on Structure and Electrochemical Performance of Spinel LiMn_2O_4 Cathode Material掺杂元素La、F对尖晶石LiMn_2O_4材料结构及性能的影响
13.A substance that adulterates.掺杂物掺有杂质的物质
14.Study on the Preparation and Properties of Doped and Co-Doped TiO_2掺杂及共掺杂TiO_2的制备及其性能研究
15.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
16.buried collector dopant隐埋集电极用掺杂剂
17.modulation-doped field effect transistor调制掺杂场效晶体管
18.Her tears mingled with her laughter.她的笑里掺杂着泪水。
相关短句/例句
Mg/F-dopedMg/F掺杂
3)Nitrogen/fluorin-dopedN/F掺杂
4)N-F codopingN、F共掺杂
5)Fluorine substitutionF元素掺杂
6)F-dopingF离子掺杂
1.It was found that the phase formation of rutile was suppressed by F-doping due to the formation of Ti-F ligand.以NH4F为掺杂剂,采用溶胶-凝胶法制备F离子掺杂型TiO2光催化剂,对其进行XRD、XPS和PL表征,结果表明,F离子掺杂TiO2由于Ti-F配位体的形成而能抑制金红石相的生成,同时F离子掺杂能增加TiO2表面缺陷浓度并降低Ti2P键的结合能,另外,由于F离子能取代Ti-OH配位体而降低了表面羟基氧浓度。
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor material bondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。 对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。 (万群)
