1)Multi-quantum-well多层量子阱
1.Light-emitting Thin Films and Devices Based on Silicon-rich Nitride and Nano-silicon Multi-quantum-well Structures富硅氮化硅和纳米硅多层量子阱硅基发光薄膜与器件
英文短句/例句
1.Light-emitting Thin Films and Devices Based on Silicon-rich Nitride and Nano-silicon Multi-quantum-well Structures富硅氮化硅和纳米硅多层量子阱硅基发光薄膜与器件
2.MQW semiconductor laser多量子阱半导体激光器
3.Design of Photonic Crystal Semiconductor Lasers and Study of Optical Properties of Multi-quantum Wells in Active Layers;光子晶体激光器设计和有源层多量子阱的光学性质研究
4.Study on Irradiation Effects of GaAs/AlGaAs Multiple Quantum Wells;GaAs/AlGaAs多量子阱材料的辐照效应研究
5.Investigation on Passive Mode-Locking in an Nd:YAG Laser Using Multi-Quantum-Well InGaAsP多量子阱InGaAsP实现Nd:YAG激光器被动锁模
6.Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser DiodesGaN基激光器多量子阱垒材料的研究
7.Quantum well infrared photodetector material with photoluminescence measurement多量子阱红外探测材料的光致荧光谱
8.Improving the quantum well properties with n-type InGaN/GaN superlattices layer引入n型InGaN/GaN超晶格层提高量子阱特性研究
9.An Investigation on InGaAs/InAlAs Multiple Quantum Well Multi Mode Interference Optical Splitters/Couplers;InGaAs/InAlAs多量子阱多模干涉光分路器/耦合器研究
10.A Study of Multiple Quantum Wells for All-Optical Switching on Spin Electronics;用于电子自旋光开关的多量子阱材料研究
11.Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;InAlGaN材料系多量子阱结构电子学特性的研究
12.Study on MQWs and Alloy of ZnO Films Made by Reactive Magnetron Sputtering;反应磁控溅射ZnO薄膜多量子阱及合金特性研究
13.γ-ray Radiation Effect on InGaAsP Multi-quantum Well Laser Diodes and Its ComponentInGaAsP多量子阱激光二极管及其组件的γ辐射效应
14.Preparation of SiGe Buffer Layer by Oxidation of SiGe/Si MQW Structure氧化SiGe/Si多量子阱制备Si基SiGe弛豫衬底
15.Stimulated emission in porous silicon quantum dots:the role of trap states多孔硅量子点的受激辐射:陷阱态的作用
16.Driving circuit for multi-quantum-well spatial light modulator多量子阱空间光调制器的驱动电路研制
17.Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement用PL谱评测多量子阱红外探测器外延材料
18.Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy StructureGaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
相关短句/例句
Multiple Quantum wells多量子阱
1.Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
3)multi-quantum well多量子阱
1.Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
4)Multi quantum well多量子阱
1.The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
2.Multi quantum well interface quality is one of key factors that affect device performance.利用金属有机气相沉积技术生长ＩｎＧａＡｓＰ／ＩｎＰ多量子阱结构，通过改变生长程序，得到了优化的陡峭量子阱界面。
3.For cases of a Si∶H film and a Si∶H/ a SiN x∶ H multi quantum well structure on the quartz substrates irradiated by the KrF pulsed excimer laser, we analyzed the effect of film thickness, laser energy density and the ratio of sublayers′ thicknesses of a Si∶H/ a SiN x∶ H MQW structure on the temperature distribution and crystall.结合ＫｒＦ准分子脉冲激光对淀积在熔凝石英衬底上的ａ－ＳｉＨ薄膜以及ａ－ＳｉＨ／ａ－ＳｉＮｘＨ多量子阱结构材料的热退火处理，分析了膜厚、激光能量密度以及ａ－ＳｉＨ／ａ－ＳｉＮｘＨ多量子阱结构材料中的子层厚度比对温度场性质及ａ－ＳｉＨ薄膜的晶化效果的影响。
5)multiple quantum well多量子阱
1.Quasi-vectorial analysis of the optical characteristics of rib waveguides and directional couplers based on InGaAs/InAlAs multiple quantum wells;InGaAs/InAlAs多量子阱脊形波导及定向耦合器光波特性准矢量分析
2.Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;InAlGaN材料系多量子阱结构电子学特性的研究
3.We have investigated the electric field optical modulation of GaAs/AlGaAs multiple quantum well(MQW).研究了ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构的电场光调制特性，测量了光反射谱、光电流谱和光电流电压特性。
6)MQW多量子阱
1.High Quality InGaAsP MQW by Selective Area Growth;选择区域生长高质量InGaAsP多量子阱材料
2.The Exciton Absorption and Light Modulation Characteristics of MQW Light Switch Devices;多量子阱光开关器件的激子吸收及光调制特性
3.CALCULATION OF Ge_xSi_(1-x)/Si MQW PHOTODETECTOR WAVEGUIDE STRUCTURE;GeSi/Si多量子阱红外探测器波导结构的理论计算
延伸阅读
多量子阱(见量子阱)多量子阱(见量子阱)multiple quantum well 多t子阱multiple quanturn well见量子阱。
