1)DF-CCPSiCOH薄膜刻蚀
1.12MHz/2MHz、60MHz/2MHz dual-frequency capacitively couple plasma (DF-CCP) of CHF3 and the etching of SiCOH film.与传统SiO2介质的刻蚀相比较,由于SiCOH薄膜中存在孔隙,因此刻蚀率随着薄膜密度的降低而增加,从而导致薄膜粗糙度增加、侧向微枝结构的形成和刻蚀深度发生改变,结果难以实现SiCOH薄膜刻蚀过程的精确控制。
2)SiCOH filmsSiCOH薄膜
1.F-SiCOH films were prepared in electron cyclotron resonance chemical vapor deposition (ECR-CVD) system using DMCPS/CHF3 mixture.根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。
2.Carbon-doping oxide materials (SiCOH films) with k of 2.62的SiCOH薄膜。
3.Using decamethylcyclopentasioxane ([Si(CH 3) 2O] 5 as liquid pr ecursor, SiCOH films, which have low dielectric constant (low k), good insul ating ability and thermal stability, were prepared by electron cyclotron resonan ce chemical vapor deposition (ECR_CVD).以十甲基环五硅氧烷为反应源、采用电子回旋共振等离子体化学气相沉积 (ECR_CVD)方法制备了具有低介电常数 ,且电绝缘性能和热稳定性优良的SiCOH薄膜 。
英文短句/例句
1.Deposition of O-doped SiCOH Films and Investigation of Properties;氧掺杂SiCOH薄膜的制备和性能研究
2.Deposition of CH_4-doped SiCOH Films and Investigation of Properties;甲烷掺杂SiCOH薄膜的制备和性能研究
3.Effect of CHF_3 Plasma Treatment on Characteristics of SiCOH FilmsCHF_3等离子体处理对SiCOH薄膜性能的影响
4.Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled PlasmaSiCOH薄膜的双频等离子体刻蚀研究
5.Investigation of Plasma Chemistry in the Deposition of F-doped SiCOH Films;氟掺杂SiCOH薄膜沉积的等离子体化学特性研究
6.Effect of Annealing on Structures and Properties of CH_4-doped SiCOH Films;热处理对掺CH_4的SiCOH薄膜结构及性能的影响
7.Effect of CHF_3/DMCPS ratio on structure and properties of F doping SiCOH low-k films deposited by ECR plasmaCHF_3/DMCPS比对F掺杂SiCOH薄膜结构及性能的影响(英文)
8.Investigation on ECR Plasma Deposition and Dielectric Property of SiCOH Low-k Films;SiCOH低k薄膜的ECR等离子体沉积与介电性能研究
9.Thermal stability of structure and properties of CH_x doped SiCOH low dielectric constant filmsCH_x掺杂SiCOH低介电常数薄膜的物性热稳定性分析
10.Investigation on Low-κ SiCOH Films Prepared by ECR-CVD and the Influence of Fluorine Incorporation;SiCOH低κ薄膜的ECR等离子体制备及F掺杂效应研究
11.A thin skin or film, such as an organic membrane or a liquid film.薄皮，薄膜如生物膜或液体膜等细薄的皮或膜
12.LDPE & HDPE sheet & bag高低密度聚乙烯薄膜及薄膜袋
13.Lin Yong Chang: Optics of Thin Film, Coating Techniques, Display Techniques.林永昌：薄膜光学，薄膜技术，显示技术。
14.To cover with or as if with a film.在…上覆以薄膜覆以或好象覆以薄膜
15.The New Semiconductor Thin Films Used for Thin Film Solar Cells;用于薄膜太阳电池的新型半导体薄膜
16.Preparation of Lithium Cobalt Oxide Film Employed as Cathode of Thin-Film Lithium Batteries;薄膜锂电池正极LiCoO_2薄膜制备
17.Preparation and Properties of the a-C:H Films and the a-C:H:Fe Films;a-C：H薄膜和a-C：H：Fe薄膜制备和性能研究
18.Effects of film thickness on the properties of ferroelectric film薄膜厚度对铁电薄膜铁电性能的影响
相关短句/例句
SiCOH filmsSiCOH薄膜
1.F-SiCOH films were prepared in electron cyclotron resonance chemical vapor deposition (ECR-CVD) system using DMCPS/CHF3 mixture.根据薄膜结构和成分的傅立叶变换红外光谱仪(FTIR)、X射线光电子能谱(XPS)以及放电等离子体中基团分步的光强度标定的发射光谱(OES)分析可知:薄膜沉积速率的变化是由于CHF3进气量的增加导致薄膜生长从以沉积F-SiCOH薄膜为主过渡到以沉积氟化非晶碳(a-C:F:H)薄膜为主的结果。
2.Carbon-doping oxide materials (SiCOH films) with k of 2.62的SiCOH薄膜。
3.Using decamethylcyclopentasioxane ([Si(CH 3) 2O] 5 as liquid pr ecursor, SiCOH films, which have low dielectric constant (low k), good insul ating ability and thermal stability, were prepared by electron cyclotron resonan ce chemical vapor deposition (ECR_CVD).以十甲基环五硅氧烷为反应源、采用电子回旋共振等离子体化学气相沉积 (ECR_CVD)方法制备了具有低介电常数 ,且电绝缘性能和热稳定性优良的SiCOH薄膜 。
3)porous SiCOH ultra-low-k film多孔SiCOH薄膜
4)SiCOH low dielectric constant filmsSiCOH低k薄膜
5)thin film etching process薄膜刻蚀技术
6)Silicon grating foilSi刻蚀膜
1.Silicon grating foil used to analyze the image transfer function in XUV radiography system;XUV成像系统中像传递函数研究用的Si刻蚀膜
延伸阅读
Sic1、名称解释碳化硅又称金钢砂或耐火砂。碳化硅是用石英砂、石油焦(或煤焦)、木屑(生产绿色碳化硅时需要加食盐)等原料在电阻炉内经高温冶炼而成。目前我国工业生产的碳化硅分为黑色碳化硅和绿色碳化硅两种，均为六方晶体，比重为3.20～3.25，显微硬度为2840～3320kg/mm2。包括黑碳化硅和绿碳化硅，其中：黑碳化硅是以石英砂,石油焦和优质硅石为主要原料,通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉,性脆而锋利。绿碳化硅是以石油焦和优质硅石为主要原料,添加食盐作为添加剂，通过电阻炉高温冶炼而成。其硬度介于刚玉和金刚石之间,机械强度高于刚玉。2.性质碳化硅的硬度很大，具有优良的导热和导电性能，高温时能抗氧化。3.用途(1)作为磨料，可用来做磨具，如砂轮、油石、磨头、砂瓦类等。(2)作为冶金脱氧剂和耐高温材料。碳化硅主要有四大应用领域,即: 功能陶瓷、高级耐火材料、磨料及冶金原料。目前碳化硅粗料已能大量供应, 不能算高新技术产品,而技术含量极高 的纳米级碳化硅粉体的应用短时间不可能形成规模经济。(3)高纯度的单晶，可用于制造半导体、制造碳化硅纤维。4.产地、输往国别及品质规格(1)产地：青海、宁夏、河南、四川、贵州等地。(2)输往国别：美国、日本、韩国、及某些欧洲国家。(3)品质规格：①磨料级碳化硅技术条件按gb/t2480—96。各牌号的化学成分由表6-6-47和表6-6-48给出。②磨料粒度及其组成按gb/t2477—83。磨料粒度组成测定方法按gb/t2481—83。
