1)a-GaNa面GaN
1.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
英文短句/例句
1.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究
2.A Density Functional Study of Small Molecule Adsorption on GaN(0001) Surface;GaN（0001）表面吸附小分子的密度泛函研究
3.The Surface Acoustic Wave Propagating Properties in AlN/GaN Structures;声表面波在AlN/GaN结构中的传播特性
4.Delta-Doping and Surface Roughness Technique of P-GaN;P型GaN的Delta掺杂及表面粗化研究
5.First-principle Study on Adsorption of GaN on Surface of SiSi表面吸附GaN的第一性原理研究
6.Analysis of Surface Transformation State of Epitaxial GaN-Based Films by Using RHEED外延GaN基薄膜表面应变演变RHEED分析
7.Study of NEA GaN photocathode surface modelNEA GaN光电阴极表面模型研究
8.Improving the Light-Extraction Efficiency of the GaN-Based Light Emitting Diodes by Textured and Sidewell;侧面倾斜与粗糙化提高GaN基LED出光效率的研究
9.Study of Surface Lattice Interval Transformmation of Epitaxial GaN-based Films by Using RHEED;从RHEED图像间距分析外延GaN基薄膜表面晶格演变
10.Theoretic Calculation of Atom and Electronic Structure for Zinc-blende GaN (110) Surface闪锌矿GaN(110)表面原子和电子结构的理论计算
11.Electron-optical-phonon Scattering Rate in a Strained GaN/GaxIn1-xN Heterojunction应变对GaN/Ga_xIn_(1-x)N异质结中界面声子的影响
12.GaN-based 512×1 Ultroviolet linear Focal Plane ArraysGaN基512×1元紫外长线列焦平面探测器组件
13.Surface morphology of GaN bombarded by highly charged ~(126)Xe~(q+) ions高电荷态离子~(126)Xe~(q+)引起GaN表面形貌变化研究
14.The influence of surface roughening on GaN based vertical-electrodes LEDs表面粗化对GaN基垂直结构LED出光效率的影响
15.Interface Effect on the Impurity State in a GaN/Ga_(1-x)Al_xN Quantum Dot under Pressure压力下GaN/Ga_(1-x)Al_xN量子点中杂质态的界面效应
16.Effect of Dielectric and Surface Treating on the Characteristic of GaN HEMT介质膜性质及表面处理对GaN HEMT特性的影响
17.Influence of Surface States on Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure表面态对AlGaN/GaN异质结构中二维电子气的影响
18.Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology异质外延GaN薄膜中缺陷对表面形貌的影响
相关短句/例句
m-plane GaNm面GaN
1.Structural and optical in-plane anisotropy of m-plane GaN~3;m面GaN平面内结构和光学各向异性研究
3)GaN(110)GaN(110)表面
4)GaN (0001) surfaceGaN(0001)表面
5)GaN/Si(001) interfaceGaN/Si(001)界面
6)gallium nitrideGaN
1.Development of Ion-implantation Research in Gallium Nitride Material;GaN材料中离子注入的研究进展
2.Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride;离子注入GaN的光学和电学特性研究
3.Based on Chin’s theory,which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges (1016~1020cm-3) at room temperature,an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained.用数值方法将室温n型GaN补偿度θ表示为Caughey-Thomas解析模型函数。
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式：C16H16ClN3O3S分子量：365.5CAS号：26807-65-8性质：暂无制备方法：暂无用途：用于轻、中度原发性高血压。
