深度刻蚀,deep-scan英语短句,例句大全

深度刻蚀,deep-scan
1)deep-scan深度刻蚀
1.The deep-scan analysis reveal that with scan depth increasing,the O/V ratio and the vanadium valence of the film changes gradiently,especially within scan depth of 80nm.采用X射线光电子能谱仪对制得的氧化钒薄膜进行了深度刻蚀分析。

英文短句/例句

1.Deep-scan Analysis of Composition and Valence of Vanadium Oxide Thin Film氧化钒薄膜成分及价态的深度刻蚀分析
2.Acceptable Error of Etching Depth in Ion Beam Etching Microlens离子束蚀刻微透镜中蚀刻深度允许误差的研究
3.multi-tone etching(陶瓷) (玻璃) (法国式浮雕) 多种深度结合的蚀刻
4.Effects of Technical Parameters on Etching Rate and Selectivity of Si Deep Trench Using ICP Etching硅深槽ICP刻蚀中刻蚀条件对形貌的影响
5.Study on Etch Selectivity Ratio of Masking Materials in Silicon Deep Etching硅深刻蚀中掩蔽层材料刻蚀选择比的研究
6.Parameter Optimization Based on High-Aspect Ratio Si Dry Etching基于高深宽比Si干法刻蚀参数优化
7.1. Discussing diffractive efficiency of DOEThere are alignment errors, linewidth errors and etching errors infabrication of DOE.衍射光学元件在制作过程中，存在掩模对准、线宽和刻蚀深度等制作误差。
8.etchings, woodcuts, lithographs;蚀刻、木刻、平版画；
9.Investigation of Electro Chemical Deep Etching Technology for Micro-nano-Electro-Mechanical System Device Fabrication;应用于微纳机电器件制造的电化学深刻蚀技术
10.NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;高密度等离子体刻蚀轮廓的数值研究
11.Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;介质膜光栅：光刻胶掩模占宽比和离子束刻蚀槽深的监控
12.The resolution of an etching process is a measure of the fidelity of pattern transfer.刻蚀工艺的分辨率是图形转移保真度的量度。
13.Strength of emotion（感情的）强烈程度，深刻程度
14.Effects of Current Density on Properties of Low-Temperature Iron Plating without Pre-etching电流密度对无刻蚀低温镀铁性能的影响
15.Research on Several Design Problems of Deep-Etched Concave Diffraction Grating Wavelength Division Multiplexers;深刻蚀凹面衍射光栅波分复用器若干设计问题的研究
16.gas discharge etching气体放电蚀刻[法]
17.laser engraving, laser etching激光雕刻，激光蚀刻
18.a block that has been etched or engraved.一块被蚀刻或雕刻的板。

相关短句/例句

etching depth刻蚀深度
1.The relation of energ/etching depth is obtained.根据Grune公式就电子束能量对抗蚀剂刻蚀深度的影响进行了理论分析,并在SDS-2电子束曝光机上分别采用5keV、10keV、15keV、20keV、25keV、30keV等能量的电子束对国产胶苏州2号进行了曝光实验,得出了能量/刻蚀深度关系曲线。
2.The etching depth of the circles showed a decreasing trend in the same processing conditions.比较了相同实验条件下直线轨迹与圆环轨迹的刻蚀深度。
3)deep etching深度蚀刻
4)Etched depth error刻蚀深度误差
5)The etching depth of grating光栅刻蚀深度
6)deep etching深刻蚀
1.Inductively coupled plasma(ICP) deep etching process of bulk titanium was studied in this paper.采用电感耦合等离子体源(inductively coupled plasma,ICP)技术对金属钛进行三维深刻蚀,采用不同刻蚀掩模、氯基刻蚀气体,研究了线圈功率、平板功率和Cl2流量对刻蚀速率和选择比等工艺参数的影响,并对Ti深刻蚀参数进行了优化,得到0。
2.Many MEMS structures need twice deep etching or even more,and usually the free-handing diaphragm is achieved after several deep etching.许多MEMS结构需要进行2次或2次以上的深刻蚀,有些需要在多次深刻蚀后释放超薄的悬空薄膜结构,这时薄膜表面极易出现微小的腐蚀孔。