Bi2Te3-ySey compoundBi2Te3-ySey化合物
3)Bi_2Te_3 based alloysBi2Te3基合金
4)Bi_2Te_3Bi2Te3
1.In this paper, synthesis of the Bi_2Te_3 based materials by wet chemical routes is reviewed detailedly.在分析介绍国内外湿化学方法制备纳米Bi2Te3系热电材料研究现状的基础上,指出了各种方法的优缺点,并展望了纳米热电材料的制备及其应用发展趋势。
2.In this paper,with the foundation of the analyse on the design ideas of properties optimization of bulk Bi_2Te_3-based thermoelectric materials,the techniques for enhancing the properties of bulk Bi_2Te_3based thermoelectric materials were commented,primarily about the optimization of ingredient,structure,alloying and mold.在分析块体Bi2Te3基热电材料性能优化设计思路的基础上,重点探讨了成分优化、结构优化、合成优化及成型优化中提高块体Bi2Te3基热电材料性能的方法。
3.Bi_2Te_3 nano-particles with the average sizes of 15~20 nm were prepared by solvothermal synthesis at 150 ℃ for 24 h using pyridine or ethanol as the reaction medium and NaBH_4 as the reductant.分别以吡啶、无水乙醇为反应介质,以NaBH4为还原剂,采用溶剂热合成方法,在150℃下反应24h制备了平均晶粒尺寸为1520nm的Bi2Te3纳米粒子。
5)bismuth tellurideBi2Te3
1.Novel rare-earth contained bismuth telluride thermoelectric materials were prepared by solvothermal synthesis at 180℃ using bismuth chloride, tellurium powder and lanthanum chloride or oxide as starting materials, and the following hot uniaxial pressing (HUP), 400℃, at 50()MPa for 1h.以氯化铋、碲粉、氯化镧或氧化镧为原料,采用180℃溶剂热合成和400℃、50MPa、1h热压技术制备了含稀土的新型Bi2Te3基热电材料。
2.Bismuth telluride P type semiconductor refrigerating material was fabricated by Solid-State Reaction and Agglomeration using Bi and Te.以Bi和Te的单质为原料,用固相反应烧结法制备Bi2Te3P型半导体制冷材料。
6)Bi 2Te 3-Sb 2Te 3-Sb 2Se 3Bi2Te3-Sb2Te3-Sb2Se3
1.The powders of N-type and P-type pseudo-ternary(Bi 2Te 3-Sb 2Te 3-Sb 2Se 3)thermoelectric materials were prepared by mechanical alloying method.本文采用机械合金化法成功制备了N型和P型赝三元(Bi2Te3-Sb2Te3-Sb2Se3)合金粉体材料,利用XRD和SEM对材料的合金化程度和材料粉体粒度进行了分析,该材料颗粒均匀、细小,颗粒尺寸平均在100nm量级左右。
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式：C16H16ClN3O3S分子量：365.5CAS号：26807-65-8性质：暂无制备方法：暂无用途：用于轻、中度原发性高血压。
