1)power MOSFET功率MOSFET
1.A resonant gate drive circuit for power MOSFET;一种用于功率MOSFET的谐振栅极驱动电路
2.Study on programmable bidirectional constant－current power based on power MOSFET;可编程双向功率MOSFET恒流源的研制
3.The Adjusting Speed System with the Power MOSFET for a Two-phase Induction Motor;采用功率MOSFET构成两相电机变频调速系统
英文短句/例句
1.The Dynamic Characteristics of Power-MOSFETs in Low Temperature;功率MOSFET低温动态特性研究
2.Study of MOSFET Application and Design of Main Circuit;功率MOSFET应用研究及主电路设计
3.Research on HF MOSFET Drive Circuit and Parallel Characteristics;高频功率MOSFET驱动电路及并联特性研究
4.Digital Research on High Power Induction Heating Power Supply Based on MOSFET;大功率MOSFET感应加热电源的数字化研究
5.Design and Characteristic Simulation of SiC Vertical Power MOSFET;SiC垂直功率MOSFET的设计与特性仿真
6.Development of Power MOSFET Radiating Effect Test System;功率MOSFET辐射效应动态测试系统研制
7.A Short-circuit Protection Method based on Detection of Power MOSFET Turn-on Voltage Drop基于功率MOSFET导通压降的短路保护方法
8.Design and Optimum of a Novel High Breakdown Voltage Semi-Superjunction Power MOSFET新型高压半超结功率MOSFET的优化设计
9.Study of Power MOSFET Application in the High-power Electronic Switch功率MOSFET在大功率电子开关中的应用研究
10.Power MOSFET based slow rising-fast falling high-voltage pulse signal source基于功率MOSFET的慢升快降型高压脉冲信号源
11.Analysis of Power MOSFET Resonant Gate Drive Technology in Power Electronics电力电子功率MOSFET管谐振驱动技术的分析
12.Research on Power MOSFET Module Based Drive Circuit and Its Implementation基于功率MOSFET模块驱动电路的研究与实现
13.Analysis of the Termination Technique for Superjunction MOSFET Power Device超结MOSFET功率器件的终端技术分析
14.Research on Main Circuit Topological Structure of High Frequency High Power Inverter Based on MOSFET;基于MOSFET高频大功率逆变电源主电路拓扑结构的研究
15.Monte Carlo Study of Channel Mobility in SiC MOSFETSiC MOSFET沟道电子迁移率的Monte Carlo模拟研究
16.Analysis and Design of Low-voltage Low-power Halo MOSFET;低压低功耗Halo MOSFET的分析与设计
17.Effect of MOSFET Input-capacitance on RF Power Amplifer Driver CircuitMOSFET输入电容对功放驱动电路的影响
18.The power factor (pf) is the ratio of average power to apparent power.功率因数是有功功率与视在功率之比。
相关短句/例句
high-power MOSEFET大功率MOSFET
3)power MOSFET/IGBT功率MOSFET/IGBT
1.The characteristics of IR2111 and IR2130 power MOSFET/IGBT driver is introduced .介绍了IR2111和IR2130功率MOSFET/IGBT驱动器的特点 ,分析了以IR2111和IR2130作为功率元件驱动器的PWM直流伺服系统主电路的工作原理。
4)power MOSFET功率MOSFET管
1.In order to reduce volume,speed up dynamic response speed,reduce drive losses of power MOSFET and raise efficiency of converter,advantages and disadvantages of existing resonant gate drive circuit plan were evaluated.为了减小体积,加快动态响应速度,减少功率MOSFET管的驱动损耗,提高变换器的效率,对现有谐振驱动电路方案的优缺点进行评估。
5)linear power MOSFET线性功率MOSFET
1.The structure & performance of linear power MOSFET is analyzed and the application of such kind of power MOSFET in the field of linear mode is also introduced in this article.本文分析了线性功率MOSFET的结构及其性能,并对其在线性模式下的应用进行了介绍。
6)power MOSFET device功率MOSFET器件
1.Single-event burnout(SEB) sensitivity was tested for power MOSFET devices,JTMCS081 and JTMCS062,which were made in Institute of Microelectronics,Chinese Academy of Sciences,using californium-252 simulation source.针对国产功率MOSFET器件JTMCS081和JTMCS062,利用实验室的MOSFET器件单粒子烧毁试验测试系统,在252Cf模拟系统上开展了单粒子烧毁评估试验研究。
延伸阅读
高压功率MOSFET门极驱动电路高压功率MOSFET门极驱动电路high voltage power MOSFET gate driver gooyo gongl口MOSFET men}{目udongd一on{日高压功率MOSFE丁门极驱动电路(highvoltage Power MOSFET gate driver)用来开关高压电路中功率MOSFET的门极控制电路，又称高压浮动MOS门极驱动器。 对门极驱动电路的要求 (1)功率MOSFET位于高电位主电路中，而驱动电路位于低电位，因此一般需要电气隔离。、 (2)驱动门极的控制信号幅值应满足10~15V。由子功率MOSFET的门极与源极之间存在极间电容，故门极驱动必须提供该极间电容充放电所需的功率。(3)应具有一定的保护功能。 驱动电路的隔离方法 (l)光隔离:采用光祸合器，电路中每个功率MOSFET需要一个隔离电源，电路复杂，价格较贵，体积大，但开关很快，信号传播延时小。 (2)磁隔离:采用脉冲变压器，电路简单，费用可行，但对占空比很宽的脉冲信号进行祸合需要复杂的技术，信号频率较低时，变压器尺寸显著增加，寄生参数将会使快速开关波形畸变。 驱动电路技术发展很快，现已生产多种驱动IC芯片。进入90年代以来，一种高性能的新型高压浮动MOS门极驱动器IC芯片投人使用，使得MOS功率器件的门极驱动更加完善和易于实现。新型组件能直接驱动低电位开关，而且因具有悬浮输出，故又能直接驱动高电位开关。例如IR213o组件为六输出门极驱动器，在三相逆变电路中，用一片组件，一个千15V直流电源就可同时驱动六个功率MOSFET，使电路大为简化。它还具有以下性能:输出电阻值较小，门极极间电容可快速充放电，提高了功率器件开关速度，开关损耗低;在高频及最高允许工作电压下内部损耗较小。门极欠压、过压或负载电流超过预定峰值时，门极信号钳位于低电平，以保护功率开关器件。 绝缘栅双极型晶体管(I GBT)也属于门极电压驱动的功率器件，故上述的门极控制电路也适用于高电位的IGBT。
