1)metal silicide金属硅化物
1.Microstructure and wear resistance of laser melt deposited Mo/Mo_(2)Ni_(3)Si metal silicide alloys;激光熔化沉积Mo/Mo_2Ni_3Si金属硅化物合金显微组织与耐磨性
2.A wear resistant Cr-Cu-Si metal silicide alloy having a microstructure consisting of the primary dual-phase dendrite with a Cr5Si3 core encapsulated by CrSi phase and the interdendritic ductile Cu-based solid solution was fabricated by the laser melting process.利用激光熔炼材料制备技术,制得了由铜基固溶体增韧的Cr5Si3/CrSi金属硅化物新型耐磨合金,分析了合金的显微组织结构,测定了合金的显微硬度,考察了合金在室温干滑动磨损条件下的耐磨性能。
3.Wear resistant Cu_(ss)/Cr_5Si_3 metal silicide composite coating was fabricated on a substrate of an austenitic stainless steel 1Cr18Ni9Ti by laser cladding process.利用激光熔覆技术在奥氏体1Cr18N i9Ti不锈钢表面制备出由Cuss增韧铜基固溶体(Cr5S i3)金属硅化物新型耐磨复合涂层,分析了其显微组织,并在室温干滑动摩损条件下评价其耐磨性能。
英文短句/例句
1.Research Progress of Metal Silicide-based Composites金属硅化物及其复合材料的研究进展
2.The Pilot Study on Synthesizing Metal/Metal Silicide Multiphase Alloys by Hot-pressing In-situ Reaction Sintering;热压原位反应合成金属/金属硅化物复相合金的初步研究
3.Study of the Growth of SiC Crystals with Different Morphologies in Matal-silicide Fluxes;金属硅化物熔体中不同形貌碳化硅晶体的生长研究
4.Research of Metal Silicide Thermoelectric Materials Prepared by Rapid Solidification and Hot Pressing;快速凝固热压金属硅化物热电材料研究
5.metal-alumina-oxide silicon金属－氧化铝－氧化物硅
6.Properties and application of intermetallic compound molybdenum disilicide金属间化合物二硅化钼的性能及应用
7.MOSAIC (Metal-Oxide-Silicon Active Integrated Circuit)金属-氧化物-硅有源集成电路
8.sos complementary metal oxide semiconductor蓝宝石上硅互补金属氧化物半导体
9.floating gate silicon process浮栅硅金属氧化物半导体工艺
10.MOSSOS (Metal-Oxide-Semiconductor Silicon On- Sapphire)采用蓝宝石硅的金属-氧化物半导体
11.double level polysilicon mos structure双层多晶硅金属氧化物半导体结构
12.double poly process双层多晶硅栅金属氧化物半导体工艺
13.silicon gate mos process硅栅金属氧化物半导体工艺
14.polycrystalline silicon gate mos多晶硅栅金属氧化物半导体
15.poly squared cmos双层多晶硅互补金属氧化物半导体
16.isolated silicon gate cmos绝缘硅栅互补金属氧化物半导体
17.silicon gate complementary MOS硅栅互补金属氧化物半导体
18.Effect of Metallic Compounds on the Heat-resistance of Silicone Rubber金属化合物对硅橡胶耐热性能的影响
相关短句/例句
Metallic silicide金属硅化物
3)silicide metallization硅化物金属化
4)ternary metal silicide三元金属硅化物
1.High-temperature sliding wear resistant Cr_(13)Ni_5Si_2/γ-Ni ternary metal silicide composite;Cr_(13)Ni_5Si_2/γ-Ni三元金属硅化物高温耐磨复合材料
2.It is found that the average hardness of Cr13Ni5Si2/γ alloy, the volume fraction of Cr13Ni5Si2 primary dendrite and the individual hardness of Cr13Ni5Si2 ternary metal silicide, all decreased with increasing the Ni content.研究了Ni含量对镍基固溶体(γ)增韧Cr13Ni5Si2三元金属硅化物合金组织及高温耐磨性的影响。
3.The ternary metal silicide Co3Mo2Si is expected to be a promising wear resistant material due to its inherent high hardness, strong anomalous hardness-temperature dependence and covalent-dominated strong atomic bonds.为改善三元金属硅化物Co3Mo2Si耐磨合金的室温韧性,利用激光熔化沉积方法制备了钴基固溶体增韧的Co3Mo2Si三元金属硅化物合金。
5)transition metal silicide过渡金属硅化物
6)multilevel silicide耐熔金属硅化物
延伸阅读
金属硅化物分子式：CAS号：性质：金属与硅生成的化合物。常分成两大类：(1)难熔金属硅化物，指周期表IVB、VB、VIB族元素的硅化物，如钛化硅、锆化硅、钽化硅、钨化硅等；(2)贵金属和近贵金属硅化物，如硅化钯、硅化铂、硅化钴等。其共同特点是：熔点高(大都在1500℃以上)，最低共熔温度高(大都在1000℃以上)。电阻率低(约为10-7Ω·m)，硬度高。多在超大规模集成电路中使用，如用作金属栅、肖特基接触、欧姆接触等。制备方法主要是用淀积金属与硅的混合物烧结而成。淀积法主要有：蒸发、溅射、电镀、化学气相淀积等。
