1)SiC crystalSiC晶体
1.Fabrication of nanostructures on 6H SiC crystal illuminated by 800 nm and 400 nm femtosecond laser is studied.研究了800nm和400nm飞秒激光垂直聚焦于6H SiC晶体表面制备纳米微结构。
英文短句/例句
1.Mechanism of Heat Transport of SiC Growth by PVT;PVT法生长SiC晶体的热系统分析
2.Solution Growth of SiC Crystals with Different Morphologies;助溶剂法不同形貌SiC晶体的生长
3.Pinning Effect of the Neutron-irradiated 6H-SiC Crystals中子辐照6H-SiC晶体中的钉扎效应
4.EFFECT OF NEUTRON-IRRADIATION ON SPECIFIC HEAT CAPACITY OF 6H-SiC CRYSTAL中子辐照对6H-SiC晶体比热容的影响
5.Growth Defect and Annealing Modification Analysis of Large-Sized SiC Crystal大尺寸SiC晶体的生长缺陷及退火改性研究
6.ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVDLPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性
7.Study on Characteristics of 4H-SiC npn Bipolar Transistor;4H-SiC npn双极晶体管特性研究
8.Study of High Frequency 4H-SiC Bipolar Junction Transistor高频4H-SiC双极晶体管的研制
9.Design of SiCGe/SiC Light-Activated Darlington Transistors and Growth of SiCGe/SiC Heterojunction;SiCGe/SiC异质结光控达林顿晶体管设计及SiCGe/SiC异质结的制备
10.Simulation Study of 4H-SiC Metal-Semiconductor Bipolar Junction Transistors4H-SiC金属—半导体双极晶体管的模拟研究
11.Micropipe Observation in Sublimation 6H-Sic By Optical Microscopy用体式显微镜研究SiC单晶中的微管缺陷
12.Properties of ZrB_2 ceramics reinforced by SiC nanowhiskers and SiC particles纳米SiC晶须和SiC颗粒混合增韧ZrB_2陶瓷性能
13.Preparation and Mechanical Properties of Silicon Carbide Whisker Reinforced Silicon Carbide Mini CompositesSiC晶须增韧SiC mini复合材料的制备与性能分析
14.Preparation and Photoluminescence of SiC Nanocrystal Films;SiC纳米晶薄膜的制备及发光性质
15.Research on Key Technologies of Polysilicon Source and Drain SiC N Channel MOSFET;多晶硅源漏SiC N-MOSFET关键技术研究
16.Infrared Spectra Study of the Electrical Properties of 6H-SiC;6H-SiC单晶电参数的红外光谱研究
17.Study on Behavior of Vanadium Doping during Growth of SiC Single Crystal by PVT ProcessPVT法生长SiC单晶中V掺杂行为研究
18.Variable charge molecular dynamics simulations of the intergranular films in SiCSiC晶界薄膜的变电荷分子动力学模拟
相关短句/例句
SiC single crystal growthSiC体单晶生长
3)SiC whiskerSiC晶须
1.Growth mechanism of SiC whisker in Al_2O_3-ZrO_2-C slide gate;铝锆碳质滑板中SiC晶须形成机理
2.Study on the SiC whisker toughening Ti(C,N)-based cermet composites;SiC晶须增韧Ti(C,N)基金属陶瓷复合材料的研究
3.Study on the separation of the paramorphic SiC whisker and SiC particle;同质异形体SiC晶须与SiC颗粒的分离
4)SiC whiskersSiC晶须
1.The dispersion performances of four different dispersants in SiC whiskers suspension were investigated by centrifugal sedimentation turbidimetric method.利用离心沉降浊度法对SiC晶须在4种不同分散剂中的分散行为进行了研究,探讨了不同分散剂的分散效果,并对其分散机理进行了分析。
2.The texture of SiC whiskers and it’s influence on cavity in SiCw/Mg-Zn-Zr composites during superplastic deformation were studied.研究了镁基复合材料超塑性变形过程中SiC晶须织构的演化规律,并分析了其对孔洞行为的影响。
3.SiC whiskers and Ti(C,N) particles toughened Al 2O 3 matrix ceramic composites for cutters were fabricated with hot pressing technique, with a certain amount of Y 2O 3 used as sintering aids to reduce the sintering temperature.研究了不同烧结温度(16 0 0～ 175 0℃ )下 ,材料的致密度和力学性能 (断裂韧性KIC ,维氏硬度HV和抗弯强度σf)随晶须含量 (10 %～4 0 % )的变化关系 ;探讨了SiC晶须和Ti(C ,N)颗粒对Al2 O3基体的协同增韧机理。
5)SiC plateletSiC片晶
1.The ultrafine SiC platelets,as an ideal toughening material,has been substituted for SiC fiber which is expensive and hardly prepared,because of its high strength,high modulus of elasticity and thermal conductivity.超细SiC片晶由于其高强度、高弹性模量和导热系数已成为替代价值昂贵、制备技术复杂SiC晶须的理想的增韧材料。
6)6H-SiC single crystal6H-SiC单晶
延伸阅读
晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
