1)lateral epitaxial overgrowth横向外延过生长
1.The principle of lateral epitaxial overgrowth GaN thin film with MOCVD was introduced.介绍了金属有机化学气相沉积(Metal-Organic Chemical Vapor Deposition,MOCVD)法横向外延过生长GaN薄膜的原理,阐述了该技术形成选择生长和减少GaN薄膜缺陷密度的机理。
英文短句/例句
1.Lateral epitaxial overgrowth GaN thin film with MOCVDMOCVD法横向外延过生长GaN薄膜
2.Study of Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire by MOCVD;蓝宝石衬底MOCVD横向外延过生长GaN薄膜的研究
3.Theoretical Analysis on the Epitaxial Lateral Overgrowth and Experiment Research on the Two Step Method;横向外延技术的理论分析与两步生长法的实验研究
4.Extending, lying, or passing across; transverse.横放，横着的延伸、放置或通过…的；横向的
5.Extending or running transversely.横的横向延伸或走向的
6.vapour phase epitaxy (VPE)汽相取向附生，汽相外延
7.liquid phase epitaxy (LPE)液相取向附生，液相外延
8.epitaxial CVD growth外延化学气相沉积生长
9.Effects of Transectional Spinal Cord Damage and Tetramethypyrazine on Outward Delayed Rectifier Potassium Current of Motoneurons of Spinal Ventral Horn in Neonatal Rats;川芎嗪对新生SD大鼠全横断脊髓前角运动神经元外向延迟整流钾电流的影响
10.Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;载能沉积过程与异质外延生长行为的分子动力学模拟研究
11.lying or extending across the length of a thing or in a cross direction.横过某物的长度的，或与之成交叉方向的。
12.(botany) growing or extending upward.（植物学）向上生长或延伸的。
13.epitaxial diffused-mesa transistor外延生长扩散台面式晶体管
14.epitaxial diffused-junction transistor外延生长扩散结式晶体管
15.SOI Compliant Substrate for GaN Epitaxial Growth;GaN外延生长中的SOI柔性衬底技术研究
16.Study of GaN Epitaxial Growth on Si-based Micro Structures;硅基微结构上的GaN外延生长研究
17.Preliminary Study on the Growth of AIN Thin Film by Molecular Beam Epitaxy;分子束外延生长AIN薄膜的初步研究
18.Study of the Growth and Properties of Silicon Carbide Epilayer;碳化硅外延材料生长及表征技术研究
相关短句/例句
epitaxial lateral overgrowth without mask无掩模横向外延过生长
3)lateral epitaxial overgrown(LEO)横向外延生长
4)epitaxial lateral overgrowth横向外延
1.Growth rate model of InP epitaxial lateral overgrowth;横向外延过生长磷化铟材料的生长速率模型
5)epitaxial process外延生长过程
6)ELO侧向外延生长
1.Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated.研究了在刻有图形的GaN“衬底”上用HVPE方法侧向外延生长 (ELO)GaN的结构特性。
延伸阅读
外延过窄外延过窄underextension 外延过窄(underoxtonsion)婴幼儿在概念形成过程中普遍存在的一种言语现象。由于知识经验的限制，思维概括水平较低，对概念内涵认识不清，扩大了概念内涵，缩小了概念外延。如儿童只知道自己的爸爸叫爸爸，对爷爷是爸爸的爸爸则感到困惑。它是由该年龄阶段儿童心理发展特点所决定的，婴幼儿中特别常见。改变儿童概念外延过窄的办法是丰富儿童的感知觉，增加儿童的见识。 (白学军撰申挂亮审)
